Document
Winsem Technology Corp.
High Voltage NPN Power Transistor with Diode
Features
• High Voltage • BVCEO : 400V • BVCBO : 800V • IC : 1.5A • Silicon Triple Diffused Type • NPN Silicon Transistor with Diode • Free-wheeling Diode Inside • Low Variable Storage-time Spread • Low Base Drive Requirement • Half Bridge Light Ballast Application
Application
• Electronic Ballasts • Adapter • Lighting
WTBV118DL
POWER TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Total Power Dissipation ( TO-92 ) Junction Temperature Operating Junction and Storage Temperature Range
Version A11
Symbol VCBO VCEO VEBO
IC
IB
PD TJ TSTG
Max rating
800 400 10 1.5
3 0.5 1 1.5 +150 -65 ~ +150
Unit V V V A A A A W ℃ ℃
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Winsem Technology Corp.
WTBV118DL
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS ( Tc = 25℃ )
Parameter
Symbol
Test Condition
Collector-Base Voltage
BVCBO IC = 1mA, IB=0
Collector-Emitter Breakdown Voltage BVCEO IC = 10mA, IE=0
Emitter- Base Breakdown Voltage Collector Cutoff Current
BVEBO ICBO
IE = 1mA, IC=0 VCB = 700V, IE=0
Emitter Cutoff Current
IEBO VEB = 9V, IC=0
hFE1 VCE = 5V, IC=10mA
DC Current Gain
hFE2 VCE = 5V, IC=400mA
hFE3 VCE = 5V, IC=1A
VCE(SAT1) IC = 0.5A, IB =0.1A Collector-Emitter Saturation Voltage
VCE(SAT2) IC = 1A, IB =0.25A
Base-Emitter Saturation Voltage
VBE(SAT1) IC = 0.5A, IB =0.1A VBE(SAT2) IC = 1A, IB =0.25A
Min Typ Max Unit
700 ─
─
V
400 ─
─
V
10 ─
─
V
──
1㎂
──
1㎂
10 ─ 10 ─
─ 30
5─
─
─ ─ 0.5
─ 1.1 1.5
V
─ ─ 1.1 V ─ ─ 1.2 V
Resistive Load Switching Time (Ratings)
Rise Time Storage Time
tr tSTG
Fall Time
tf
Note: Pulse Duration = 300uS, duty cycle ≦ 2%
Vcc=250V, IC=1A, IB1=0.2A, IB2 = 0.2A, tp = 25uS Duty Cycle < 1%
─ ─ ─
0.5 0.7 0.5 0.9 0.2 0.4
uS uS uS
Thermal Performance
Parameter
Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance
Symbol
RӨ JC RӨ JA
Limit
83.3 200
Unit
oC/W oC/W
Version A11
Page 2
Winsem Technology Corp.
Electrical Characteristic Curves
Static Characteristics
WTBV118DL
POWER TRANSISTOR
DC Current Gain
Vce(sat) v.s Vbe(sat)
Power Derating
Safety Operating Area
Version A11
Page 3
Winsem Technology Corp.
WTBV118DL
POWER TRANSISTOR
Ordering Information
Type NO
Marking
Package Code
───────────────────────────────────────
WTBV118DL
118DL
TO-92
Marking and Pin Define
Version A11
TO-92 Package Dimension
TO-92 DIMENSION
MILLIMETERS INCHES DIM
MIN MAX MIN MAX
A 4.3 4.7 0.169 0.185
B 4.3 4.7 0.169 0.185
C 13.53(typ)
0.532(typ)
D 0.39 0.49 0.015 0.019
E 1.18 1.28 0.046 0.5
F 3.3 3.7 0.13 0.146
G 1.27 1.31 0.05 0.051
H 0.33 0.43 0.013 0.017
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