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WTBV118DL Dataheets PDF



Part Number WTBV118DL
Manufacturers Winsem Technology
Logo Winsem Technology
Description POWER TRANSISTOR
Datasheet WTBV118DL DatasheetWTBV118DL Datasheet (PDF)

Winsem Technology Corp. High Voltage NPN Power Transistor with Diode Features • High Voltage • BVCEO : 400V • BVCBO : 800V • IC : 1.5A • Silicon Triple Diffused Type • NPN Silicon Transistor with Diode • Free-wheeling Diode Inside • Low Variable Storage-time Spread • Low Base Drive Requirement • Half Bridge Light Ballast Application Application • Electronic Ballasts • Adapter • Lighting WTBV118DL POWER TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Coll.

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Winsem Technology Corp. High Voltage NPN Power Transistor with Diode Features • High Voltage • BVCEO : 400V • BVCBO : 800V • IC : 1.5A • Silicon Triple Diffused Type • NPN Silicon Transistor with Diode • Free-wheeling Diode Inside • Low Variable Storage-time Spread • Low Base Drive Requirement • Half Bridge Light Ballast Application Application • Electronic Ballasts • Adapter • Lighting WTBV118DL POWER TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Total Power Dissipation ( TO-92 ) Junction Temperature Operating Junction and Storage Temperature Range Version A11 Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Max rating 800 400 10 1.5 3 0.5 1 1.5 +150 -65 ~ +150 Unit V V V A A A A W ℃ ℃ Page 1 Winsem Technology Corp. WTBV118DL POWER TRANSISTOR ELECTRICAL CHARACTERISTICS ( Tc = 25℃ ) Parameter Symbol Test Condition Collector-Base Voltage BVCBO IC = 1mA, IB=0 Collector-Emitter Breakdown Voltage BVCEO IC = 10mA, IE=0 Emitter- Base Breakdown Voltage Collector Cutoff Current BVEBO ICBO IE = 1mA, IC=0 VCB = 700V, IE=0 Emitter Cutoff Current IEBO VEB = 9V, IC=0 hFE1 VCE = 5V, IC=10mA DC Current Gain hFE2 VCE = 5V, IC=400mA hFE3 VCE = 5V, IC=1A VCE(SAT1) IC = 0.5A, IB =0.1A Collector-Emitter Saturation Voltage VCE(SAT2) IC = 1A, IB =0.25A Base-Emitter Saturation Voltage VBE(SAT1) IC = 0.5A, IB =0.1A VBE(SAT2) IC = 1A, IB =0.25A Min Typ Max Unit 700 ─ ─ V 400 ─ ─ V 10 ─ ─ V ── 1㎂ ── 1㎂ 10 ─ 10 ─ ─ 30 5─ ─ ─ ─ 0.5 ─ 1.1 1.5 V ─ ─ 1.1 V ─ ─ 1.2 V Resistive Load Switching Time (Ratings) Rise Time Storage Time tr tSTG Fall Time tf Note: Pulse Duration = 300uS, duty cycle ≦ 2% Vcc=250V, IC=1A, IB1=0.2A, IB2 = 0.2A, tp = 25uS Duty Cycle < 1% ─ ─ ─ 0.5 0.7 0.5 0.9 0.2 0.4 uS uS uS Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance Symbol RӨ JC RӨ JA Limit 83.3 200 Unit oC/W oC/W Version A11 Page 2 Winsem Technology Corp. Electrical Characteristic Curves Static Characteristics WTBV118DL POWER TRANSISTOR DC Current Gain Vce(sat) v.s Vbe(sat) Power Derating Safety Operating Area Version A11 Page 3 Winsem Technology Corp. WTBV118DL POWER TRANSISTOR Ordering Information Type NO Marking Package Code ─────────────────────────────────────── WTBV118DL 118DL TO-92 Marking and Pin Define Version A11 TO-92 Package Dimension TO-92 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.3 4.7 0.169 0.185 B 4.3 4.7 0.169 0.185 C 13.53(typ) 0.532(typ) D 0.39 0.49 0.015 0.019 E 1.18 1.28 0.046 0.5 F 3.3 3.7 0.13 0.146 G 1.27 1.31 0.05 0.051 H 0.33 0.43 0.013 0.017 Page 4 .


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