WTBV53DM

Winsem Technology Corp. High Voltage NPN Transistor WTBV53DM(R) / WTI53D POWER TRANSISTOR TO-126 Pin Definition 1. Emitter 2. Collector 3. Base TO-126 R Pin Definition 1. Base 2. Collector 3. Emitter Features High Voltage Very High Switch Speed BVCEO : 400V BVCBO : 800V IC : 2.5A VCE(SAT) : max1V@Ic / IB=1A/ 0.25A Silicon Triple Diffused Type Application Electronic Ballasts Adapter Lighting ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO126) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Version A12 Symbol VCBO VCEO VEBO IC ICP PD TJ TSTG Max Rating 800 400 9 2.5 5 20 30 150 -55 ~ +150 Unit V V V A A W ℃ ℃ Page 1 Winsem Technology Corp. WTBV53DM(R) / WTI53D POWER TRANSISTOR ELECTRICAL CHARACTERISTICS ( Tc = 25℃ ) Parameter Symbol Test Condition Collector-Base Voltage Collector-Emitter Breakdown Voltage BVCBO BVCEO IC = 1mA, IB=0 IC = 10mA, IE=0 Emitter- Base Breakdown Voltage BVEBO IE = 1mA, IC=0 Collector Cutoff Current ICBO VCB = 700V, IE=0 Emitter Cutoff Current IEBO VEB = 9V, IC=0 hFE1 VCE = 5V, IC=500mA DC Current Gain hFE2 VCE = 5V, IC=1A hFE3 VCE = 5V, IC=2A VCE(SAT1) IC/IB = 0.5A / 0.1A Collector-Emitter Saturation Voltage VCE(SAT2) IC/IB = 1A / 0.25A Base-Emitter Saturation Voltage VBE(SAT1) IC/IB = 0.5A / 0.1A VBE(SAT2) IC...