WTBV118DI

Winsem Technology Corp. High Voltage NPN Power Transistor with Diode Features High Voltage BVCEO : 400V BVCBO : 800V IC : 1.5A Silicon Triple Diffused Type NPN Silicon Transistor with Diode Free-wheeling Diode Inside Low Variable Storage-time Spread Low Base Drive Requirement Half Bridge Light Ballast Application Application Electronic Ballasts Adapter Lighting WTBV118DI POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect Current Collector Peak Current (tp <5ms) Base Current Base Peak Current (tp <5ms) Total Power Dissipation @ Tc ≦ 25℃ (TO-251) Maximum Operating Junction Temperature Storage Temperature Range Version A10 Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot TJ TSTG Max rating 800 400 10 1.5 3 1 2 30 +150 -65 ~ +150 Unit V V V A A A A W ℃ ℃ Page 1 Winsem Technology Corp. WTBV118DI POWER TRANSISTOR ELECTRICAL CHARACTERISTICS ( Tc = 25℃ ) Parameter Symbol Test Condition Collector-Base Voltage Collector-Emitter Breakdown Voltage BVCBO BVCEO IC = 1mA, IB=0 IC = 10mA, IE=0 Emitter- Base Breakdown Voltage BVEBO IE = 1mA, IC=0 Collector Cutoff Current ICBO VCB = 700V, IE=0 Emitter Cutoff Current IEBO VEB = 9V, IC=0 hFE1 VCE = 5V, IC=10mA DC Current Gain hFE2 VCE = 5V, IC=400mA hFE3 VCE = 5V, IC=1A VCE(SAT1) IC = 0.5A, IB =0.1A Collector-Emitter Saturation Voltage VCE(SAT2) IC = 1A, IB =0.25A Base-Emitter Saturation Voltage VBE(SAT1) IC = ...