WTI57D

Winsem Technology Corp. High Voltage NPN Transistor Features High Voltage Very High Switch Speed BVCEO : 400V BVCBO : 800V IC : 4A Silicon Triple Diffused Type WTI57D POWER TRANSISTOR Application Electronic Ballasts Adapter Lighting ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PD TJ TSTG Max Rating 800 400 9 4 8 35 150 -55 ~ +150 Unit V V V A A W ℃ ℃ Version A12 Page 1 Winsem Technology Corp. WTI57D POWER TRANSISTOR ELECTRICAL CHARACTERISTICS ( Tc = 25℃ ) Parameter Symbol Test Condition Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current BVCBO BVCEO BVEBO ICBO IC = 1mA, IB=0 IC = 10mA, IE=0 IE = 1mA, IC=0 VCB = 700V, IE=0 Emitter Cutoff Current IEBO hFE1 VEB = 7V, IC=0 VCE = 5V, IC=500mA DC Current Gain hFE2 VCE = 5V, IC=1A hFE3 VCE = 5V, IC=2A Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(SAT1) IC/IB = 0.5A / 0.1A VCE(SAT2) IC/IB = 1A / 0.25A VBE(SAT1) IC/IB = 0.5A / 0.1A VBE(SAT2) IC/IB = 1A / 0.25A Min Typ Max Unit 800 ─ 400 ─ 9─ ── ─V ─V ─V 110 ㎂ ─ ─ 225 ㎂ 30 ─ ─ 20 ─ 40 15 ─ ─ ─ ─ 0.7 V ── 1 ─ ─ 1.3 V ─ ─ 1.5 Resistive Load Switching Time (Ratings) Rise Time Ton Storage Time ...