Winsem Technology Corp.
High Voltage NPN Power Transistor
Features
• High Voltage • High Switch Speed • BVCEO : 400V • B...
Winsem Technology Corp.
High Voltage
NPN Power
Transistor
Features
High Voltage High Switch Speed BVCEO : 400V BVCBO : 700V IC : 8A VCE(SAT) : 3V @ IC / IB = 8A / 2A
WTX13007 / WTF13007
POWER
TRANSISTOR
Application
Electronic Ballasts Adapter Lighting
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Total Power Dissipation ( TO-220 ) Total Power Dissipation ( TO-220F ) Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. Pw=300uS, Duty≦ 2%
Version A11
Symbol VCBO VCEO VEBO
IC
IB
PD PD TJ TSTG
Max rating
700 400
9 8 16 4 8 75 30 +150 -55 ~ +150
Unit V V V A A A A W W ℃ ℃
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Winsem Technology Corp.
ELECTRICAL CHARACTERISTICS ( Tc = 25℃ )
WTX13007 / WTF13007
POWER
TRANSISTOR
Parameter
Symbol
Test Condition
Collector-Base Voltage Collector-Emitter Breakdown Voltage
BVCBO BVCEO
IC = 1mA, IB=0 IC = 10mA, IE=0
Emitter- Base Breakdown Voltage
BVEBO IE = 1mA, IC=0
Collector Cutoff Current Collector Cutoff Current
ICEO ICBO
VCE = 400V, IB=0 VCB = 700V, IE=0
Emitter Cutoff Current
IEBO VEB = 9V, IC=0
DC Current Gain
hFE1 hFE2
VCE = 5V, IC=2A VCE = 5V, IC=5A
VCE(SAT1) IC =2A, IB =0. 4A
Collector-Emitter Saturation Voltage VCE(SAT2) IC = 5A, IB =1A
VCE(SAT3) IC = 8A, IB =2A
Base-Emitter Saturation Voltage
VBE(SAT1) IC = 2A, IB =0.4A VBE(SAT2) IC = ...