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WTF13007

Winsem Technology

POWER TRANSISTOR

Winsem Technology Corp. High Voltage NPN Power Transistor Features • High Voltage • High Switch Speed • BVCEO : 400V • B...


Winsem Technology

WTF13007

File Download Download WTF13007 Datasheet


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Winsem Technology Corp. High Voltage NPN Power Transistor Features High Voltage High Switch Speed BVCEO : 400V BVCBO : 700V IC : 8A VCE(SAT) : 3V @ IC / IB = 8A / 2A WTX13007 / WTF13007 POWER TRANSISTOR Application Electronic Ballasts Adapter Lighting ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Total Power Dissipation ( TO-220 ) Total Power Dissipation ( TO-220F ) Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. Pw=300uS, Duty≦ 2% Version A11 Symbol VCBO VCEO VEBO IC IB PD PD TJ TSTG Max rating 700 400 9 8 16 4 8 75 30 +150 -55 ~ +150 Unit V V V A A A A W W ℃ ℃ Page 1 Winsem Technology Corp. ELECTRICAL CHARACTERISTICS ( Tc = 25℃ ) WTX13007 / WTF13007 POWER TRANSISTOR Parameter Symbol Test Condition Collector-Base Voltage Collector-Emitter Breakdown Voltage BVCBO BVCEO IC = 1mA, IB=0 IC = 10mA, IE=0 Emitter- Base Breakdown Voltage BVEBO IE = 1mA, IC=0 Collector Cutoff Current Collector Cutoff Current ICEO ICBO VCE = 400V, IB=0 VCB = 700V, IE=0 Emitter Cutoff Current IEBO VEB = 9V, IC=0 DC Current Gain hFE1 hFE2 VCE = 5V, IC=2A VCE = 5V, IC=5A VCE(SAT1) IC =2A, IB =0. 4A Collector-Emitter Saturation Voltage VCE(SAT2) IC = 5A, IB =1A VCE(SAT3) IC = 8A, IB =2A Base-Emitter Saturation Voltage VBE(SAT1) IC = 2A, IB =0.4A VBE(SAT2) IC = ...




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