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MOS FET. K2590 Datasheet

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MOS FET. K2590 Datasheet






K2590 FET. Datasheet pdf. Equivalent




K2590 FET. Datasheet pdf. Equivalent





Part

K2590

Description

Silicon N-Channel MOS FET



Feature


2SK2590 Silicon N-Channel MOS FET Appli cation High speed power switching Featu res • Low on-resistance • High spee d switching • Low drive current • N o Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, M otor Control Outline TO-220AB Prelimin ary D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK2590 Absolute Maximum Ratings (Ta = 25°C) Item Dr.
Manufacture

Hitachi Semiconductor

Datasheet
Download K2590 Datasheet


Hitachi Semiconductor K2590

K2590; ain to source voltage Gate to source vol tage Drain current Drain peak current B ody to drain diode reverse drain curren t Channel dissipation Channel temperatu re Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I *1 D (pulse) I DR Pch*2 Tch Tstg Ratings 20 0 ±20 7 28 7 50 150 –55 to +150 Uni t V V A A A W °C °C 2 2SK.


Hitachi Semiconductor K2590

2590 Electrical Characteristics (Ta = 2 5°C) Item Symbol Min Drain to sourc e breakdown voltage V(BR)DSS 200 Gat e to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGS S Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 2.0 — Forward t ransfer admittance |yfs| .


Hitachi Semiconductor K2590

3.0 Input capacitance Output capacitanc e Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay tim e Fall time Body to drain diode forward voltage Body to drain diode reverse re covery time Note 1. Pulse Test Ciss Co ss Crss t d(on) tr t d(off) tf VDF t rr — — — — — — — — — Typ — — — — — 0.33 4.5 700 26 0 45 20 45 50 35 1.1 150 Max Unit —V —V ±10 µ.

Part

K2590

Description

Silicon N-Channel MOS FET



Feature


2SK2590 Silicon N-Channel MOS FET Appli cation High speed power switching Featu res • Low on-resistance • High spee d switching • Low drive current • N o Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, M otor Control Outline TO-220AB Prelimin ary D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK2590 Absolute Maximum Ratings (Ta = 25°C) Item Dr.
Manufacture

Hitachi Semiconductor

Datasheet
Download K2590 Datasheet




 K2590
2SK2590
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No Secondary Breakdown
Suitable for Switching regulator, DC-DC converter, Motor Control
Outline
TO-220AB
Preliminary
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S




 K2590
2SK2590
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25 °C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
200
±20
7
28
7
50
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2




 K2590
2SK2590
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
200
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
2.0
Forward transfer admittance |yfs|
3.0
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse Test
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
Typ
0.33
4.5
700
260
45
20
45
50
35
1.1
150
Max Unit
—V
—V
±10 µA
250 µA
4.0 V
0.45
—S
— pF
— pF
— pF
— ns
— ns
— ns
— ns
—V
— ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS =160 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A
VGS = 10 V*1
ID = 4 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 4 A
VGS = 10 V
RL = 7.5
IF = 7 A, VGS = 0
IF = 7 A, VGS = 0,
diF / dt = 100 A / µs
See characteristics curves of 2SK1957.
3



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