K2008 Datasheet PDF | Hitachi Semiconductor





(PDF) K2008 Datasheet

Part Number K2008
Description Silicon N-Channel MOS FET
Manufacture Hitachi Semiconductor
Total Page 6 Pages
PDF Download Download K2008 Datasheet PDF

Features: 2SK2008 Silicon N-Channel MOS FET Applic ation High speed power switching Featur es • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for S witching regulator, DC - DC converter, Motor Control Outline TO-3PFM D G1 2 3 1. Gate 2. Drain 3. Source S 2SK2008 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to so urce voltage Drain current Drain peak c urrent Body to drain diode reverse drai n current Channel dissipation Channel t emperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. V alue at Tc = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Rat ings 250 ±30 20 80 20 60 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2 008 Electrical Characteristics (Ta = 2 5°C) Item Symbol Min Drain to sourc e breakdown voltage V(BR)DSS 250 Gat e to source breakdown voltage V(BR)GSS ±30 Gate to source leak current IGS S Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static dr.

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K2008 datasheet
2SK2008
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No Secondary Breakdown
Suitable for Switching regulator, DC - DC converter, Motor Control
Outline
TO-3PFM
D
G1
2
3
1. Gate
2. Drain
3. Source
S

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