2SK2008
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switc...
2SK2008
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching
regulator, DC - DC converter, Motor Control
Outline
TO-3PFM
D G1
2 3 1. Gate 2. Drain 3. Source
S
2SK2008
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 250 ±30 20 80 20 60 150 –55 to +150
Unit V V A A A W °C °C
2
2SK2008
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
250
Gate to source breakdown voltage
V(BR)GSS
±30
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on) resistance
— — 2.0 —
Forward transfer admittance |yfs|
9.0
Typ —
—
— — — 0.12
14
Max —
—
±10 250 3.0 0.15
—
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test
Ciss Coss Crss t d(on) tr t d(off) tf VDF
t rr
— — — — — — — —
—
2340 1000 160 30 125 190 100 1.2
— — — — — — — —
120 —
Unit V
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