K1336

2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D 321 1. Source G 2. Drain 3. Gate S 2SK1336 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch Tch Tstg Ratings 60 ±20 0.3 1.2 0.3 400 150 –55 to +150 Unit V V A A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current I GSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 1.0 — — Forward transfer admittance |yfs| 0.22 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage t d(on) tr t d(off) tf VDF — — — — — Body to drain diode reverse recovery time t rr — Note: 1. Pulse test Typ — — — — — 1.3 1.8 0.35 33 17 5 2 4 18 16 0.9 45 Max — — ±10 50 2.0 1.7 2.5 — — — — — — — — ...