AOC2411

AOC2411 30V P-Channel MOSFET General Description Product Summary The AOC2411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. Vds ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) -30V -3.4A < 45mΩ < 60mΩ WLCSP 1.6x1.6_4 Bottom View 3 D 2 D Top View Equivalent Circuit D SG Pin1(G) 41 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2 TA=25°C VGS ID ISM Power Dissipation Note1 TA=25°C Junction and Storage Temperature Range PD TJ, TSTG Maximum -30 ±12 -3.4 -52 0.8 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient Note1 Maximum Junction-to-Ambient Note1 Maximum Junction-to-Foot(Drain) t ≤ 5s Steady-State Steady-State Symbol RθJA RθJF Typ 75 130 16 Max 90 155 20 Note 1. Mounted on minimum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max Units V V A W °C Units °C/W °C/W °C/W Rev 1 : August 2012 www.aosmd.com Page 1 of 5 AOC2411 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Source-Source Breakdown Voltage IDSS Zero Gate Voltage Source Current IGSS VGS(th) Gate leakage current Gate Threshold Voltage RDS(ON) Static Source to Source On-Resistance gFS Forward Transconductance VFSD Diode Forward Voltage ...