AOC2413

AOC2413 8V P-Channel MOSFET General Description The AOC2413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. Product Summary VDS ID (at VGS=-2.5V) RDS(ON) (at VGS=-2.5V) RDS(ON) (at VGS=-1.8V) RDS(ON) (at VGS=-1.5V) RDS(ON) (at VGS=-1.2V) Typical ESD protection -8V -3.5A < 28mΩ < 32mΩ < 37mΩ < 47mΩ HBM Class 3A MCSP 1.57x1.57_4 Top View Bottom View Top View Pin1(G) Bottom View 32 DD S 4 G 1 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2 Power Dissipation Note1 TA=25°C TA=25°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG Maximum -8 ±5 -3.5 -50 0.55 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Note 1. Mounted on minimum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max Typ 140 190 Max 170 230 D S Units V V A W °C Units °C/W °C/W Rev 0 : Dec. 2012 www.aosmd.com Page 1 of 5 AOC2413 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconduc...