2SD667A

2SD667, 2SD667A Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB647/A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) REJ03G0769-0200 (Previous ADE-208-1137) Rev.2.00 Aug.10.2005 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SD667 120 80 5 1 2 0.9 150 –55 to +150 2SD667A 120 100 5 1 2 0.9 150 –50 to +150 (Ta = 25°C) Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SD667, 2SD667A Electrical Characteristics Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE1*1 2SD667 Min Typ Max 120 — — 80 — — 5 —— — — 10 60 — 320 2SD667A Min Typ Max 120 — — 100 — — 5 —— — — 10 60 — 200 hFE2 30 — — 30 — — Collector to emitter saturation voltage VCE(sat) — — 1 —— 1 Base to emitter voltage VBE — — 1.5 — — 1.5 Gain bandwidth product fT — 140 — — 140 — Collector output Cob — 12 — — capacitance Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follows. 2. Pulse test B CD 2SD667 60 to 120 100 to 200 160 to 320 2SD667A 60 to 120 100 to 200 12 — (Ta = 25°C) Unit T...