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A1931

Silicon PNP Transistor

Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications 2SA1931 Unit: mm Low saturation voltage: VCE (sat) = −0.4 V (max) High-speed switching time: tstg = 1.0 µs (typ.) Complementary to 2SC4881 Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base...

Toshiba

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