A1931 Datasheet (data sheet) PDF - Toshiba Semiconductor





A1931 Datasheet - Silicon PNP Epitaxial Type Transistor

A1931   A1931  

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Curren t Switching Applications 2SA1931 Unit: mm • Low saturation voltage: VCE (s at) = −0.4 V (max) • High-speed swi tching time: tstg = 1.0 µs (typ.) • Complementary to 2SC4881 Maximum Ratin gs (Tc = 25°C) Characteristic Collec tor-base voltage Collector-emitter vol tage Emitter-base voltage Collector


Manufacture Part Number Description

Toshiba

A1931

Silicon PNP Epitaxial Type Transistor




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