SOT23
PMV48XPA
20 V, P-channel Trench MOSFET
10 March 2014
Product data sheet
1. General description
P-channel enhanc...
SOT23
PMV48XPA
20 V, P-channel Trench MOSFET
10 March 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101 qualified
3. Applications
High-side loadswitch High-speed line driver Relay driver Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tamb = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1] - - -3.5 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C resistance
- 48 55 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
PMV48XPA
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
D
G
S 017aaa094
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV48XPA
TO-236AB
Description plastic surface-mounted package; 3 leads
Version SOT23
7. Marking
Table 4. Markin...