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MCT61 Dataheets PDF



Part Number MCT61
Manufacturers ISOCOM
Logo ISOCOM
Description HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
Datasheet MCT61 DatasheetMCT61 Datasheet (PDF)

MCT6, MCT61, MCT62, MCT66 HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l MCT6 - VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 MCT61, MCT62, MCT66 VDE 0884 approval pending l EN60950 approval pending DESCRIPTION The MCT6, MCT61, MCT62 & MCT66 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in.

  MCT61   MCT61



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MCT6, MCT61, MCT62, MCT66 HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l MCT6 - VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 MCT61, MCT62, MCT66 VDE 0884 approval pending l EN60950 approval pending DESCRIPTION The MCT6, MCT61, MCT62 & MCT66 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages mounted two channels per unit. FEATURES l Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM SURFACE MOUNT OPTION G 7.62 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 Dimensions in mm 2.54 1.2 10.16 9.16 1 7.0 2 6.0 3 4 4.0 3.0 0.5 3.0 0.5 3.35 7.62 0.26 8 7 6 5 13° Max ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BV CEO Emitter-collector Voltage BV ECO Power Dissipation 30V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel:(214)495-0755 Fax:(214)495-0901 e-mail [email protected] http://www.isocom.com DB92012m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER MIN TYP MAX UNITS Input Output Coupled Forward Voltage (V ) F Reverse Voltage (VR) Reverse Current (IR) 3 Collector-emitter Breakdown (BV ) CEO Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (I ) CEO 30 6 Current Transfer Ratio (CTR) (Note 2) MCT6 20 MCT61 MCT62 50 100 MCT66 6 Collector-emitter Saturation Voltage VCESAT MCT6,61,62 MCT66 Input to Output Isolation Voltage VISO 5300 Input to Output Isolation Voltage VISO 7500 Input-output Isolation Resistance R 5x1010 ISO Output Rise Time, Fall Time tr , tf 2.4 1.50 V V 10 µA V V 100 nA % % % % 0.4 V 0.4 V VRMS VPK Ω µs Output Rise Time, Fall Time tr , tf 15 µs TEST CONDITION I = 20mA F IR = 10µA VR = 3V I = 1mA (note 2) C IE = 100µA V = 10V CE 10mA I , 10V V F CE 5mA IF , 5V VCE 5mA IF , 5V VCE 10mA I , 10V V F CE 16mA IF , 2mA IC 40mA I , 2mA I FC See note 1 See note 1 V = 500V (note 1) IO IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 1) I = 2mA, V = 10V, C CC RL = 1kΩ (Fig. 2) Note 1 Not.


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