A1815

Ordering number:EN4625 PNP Epitaxial Planar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications Features · High power gain : PG=25dB (f=100MHz). · High cutoff frequency ; fT=750MHz typ. · Low collector-to-emitter saturation voltage. · Complementary pair with the 2SC4432. Package Dimensions unit:mm 2018A [2SA1815] C : Collector B : Base E : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions SANYO : CP Ratings –15 –12 –3 –50 250 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Power Gain ICBO IEBO hFE fT Cob Cre VCE(sat) PG * : The 2SA1815 is calssified by 5mA hFE as follows : 60 3 120 90 4 180 135 VCB=–12V, IE=0 VEB=–2V, IC=0 VCE=–10V, IC=–5mA VCE=–10V, IC=–5mA VCB=–10V, f=1MHz VCB=–10V, f=1MHz IC=–10mA, IB=–1mA VCE=–10V, IC=–10mA, f=100MHz Marking : JS 5 270 hFE rank : 3, 4, 5 Ratings min typ 60* 750 1.2 0.9 –0.1 25 max –0.1 –0.1 270* 1.6 –0.3 Unit µA µA MHz pF pF V dB Any and all SANYO products described or contained herein do not hav...