A1815 Transistor Datasheet

A1815 Datasheet, PDF, Equivalent


Part Number

A1815

Description

PNP Epitaxial Planar Silicon Transistor

Manufacture

Sanyo Semicon Device

Total Page 3 Pages
Datasheet
Download A1815 Datasheet


A1815
Ordering number:EN4625
PNP Epitaxial Planar Silicon Transistor
2SA1815
FM, RF, MIX, IF Amplifier, High-Frequency
General-Purpose Amplifier Applications
Features
· High power gain : PG=25dB (f=100MHz).
· High cutoff frequency ; fT=750MHz typ.
· Low collector-to-emitter saturation voltage.
· Complementary pair with the 2SC4432.
Package Dimensions
unit:mm
2018A
[2SA1815]
C : Collector
B : Base
E : Emitter
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
SANYO : CP
Ratings
–15
–12
–3
–50
250
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Power Gain
ICBO
IEBO
hFE
fT
Cob
Cre
VCE(sat)
PG
* : The 2SA1815 is calssified by 5mA hFE as follows :
60 3 120 90 4 180 135
VCB=–12V, IE=0
VEB=–2V, IC=0
VCE=–10V, IC=–5mA
VCE=–10V, IC=–5mA
VCB=–10V, f=1MHz
VCB=–10V, f=1MHz
IC=–10mA, IB=–1mA
VCE=–10V, IC=–10mA, f=100MHz
Marking : JS
5 270
hFE rank : 3, 4, 5
Ratings
min typ
60*
750
1.2
0.9
–0.1
25
max
–0.1
–0.1
270*
1.6
–0.3
Unit
µA
µA
MHz
pF
pF
V
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/12894HO (KOTO) AX-8848 No.4625–1/3

A1815
PG Test Circuit
2SA1815
Unit (capacitance : F)
L1 : 1mmø plated wire 10mmø 5T, pitch 15mm, tap : 2T from base side
L2 : 1mmø plated wire 10mmø 7T, pitch 10mm, tap : 2T from VC side.
L3 : 1mmø plated wire 10mmø 3T, pitch 10mm
No.4625–2/3


Features Ordering number:EN4625 PNP Epitaxial Pl anar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency Gene ral-Purpose Amplifier Applications Fea tures · High power gain : PG=25dB (f=1 00MHz). · High cutoff frequency ; fT=7 50MHz typ. · Low collector-to-emitter saturation voltage. · Complementary pa ir with the 2SC4432. Package Dimension s unit:mm 2018A [2SA1815] C : Collecto r B : Base E : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage C ollector-to-Emitter Voltage Emitter-to- Base Voltage Collector Current Collecto r Dissipation Junction Temperature Stor age Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions SANYO : CP Ratings –15 –12 –3 –50 250 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25 ˚C Parameter Symbol Conditions Col lector Cutoff Current Emitter Cutoff Cu rrent DC Current Gain Gain-Bandwidth Pr oduct Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Satura.
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