K1165 Datasheet: Silicon N Channel MOS FET





K1165 Silicon N Channel MOS FET Datasheet

Part Number K1165
Description Silicon N Channel MOS FET
Manufacture Renesas Technology
Total Page 6 Pages
PDF Download Download K1165 Datasheet PDF

Features: 2SK1165, 2SK1166 Silicon N Channel MOS F ET Application High speed power switchi ng Features • Low on-resistance • H igh speed switching • Low drive curre nt • No secondary breakdown • Suita ble for switching regulator and DC-DC c onverter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0914-0200 (Previous: ADE-208-1 252) Rev.2.00 Sep 07, 2005 D G 1. Ga te 2. Drain (Flange) 3. Source S Re v.2.00 Sep 07, 2005 page 1 of 6 2SK116 5, 2SK1166 Absolute Maximum Ratings It em Drain to source voltage 2SK1165 2 SK1166 Gate to source voltage Drain c urrent Drain peak current Body to dra in diode reverse drain current Channel dissipation Channel temperature Stor age temperature Notes: 1. PW ≤ 10 µ s, duty cycle ≤ 1% 2. Value at TC = 2 5°C Electrical Characteristics Symbo l VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tc h Tstg Item Symbol Drain to source b reakdown voltage 2SK1165 2SK1166 V(BR )DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current I.

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2SK1165, 2SK1166
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
REJ03G0914-0200
(Previous: ADE-208-1252)
Rev.2.00
Sep 07, 2005
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6

                 






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