SKB10N60

SKP10N60 SKB10N60, SKW10N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Very soft, fast recovery anti-parallel EmCon diode C G E Type SKP10N60 SKB10N60 SKW10N60 VCE IC VCE(sat) Tj Package 600V 10A 2.2V 150°C TO-220AB TO-263AB TO-247AC Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Symbol VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj , Tstg Ordering Code Q67040-S4217 Q67040-S4218 Q67040-S4241 Value 600 21 10.9 42 42 Unit V A 21 10 42 ±20 10 104 -55...+150 V µs W °C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00 SKP10N60 SKB10N60, SKW10N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resista...