Document
SKP10N60 SKB10N60, SKW10N60
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs • Designed for:
- Motor controls - Inverter
• NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
C G
E
Type SKP10N60 SKB10N60 SKW10N60
VCE IC VCE(sat) Tj Package
600V 10A
2.2V
150°C TO-220AB
TO-263AB
TO-247AC
Maximum Ratings
Parameter
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature
Symbol VCE IC
ICpuls -
IF
IFpuls VGE tSC
Ptot
Tj , Tstg
Ordering Code Q67040-S4217 Q67040-S4218 Q67040-S4241
Value 600
21 10.9 42 42
Unit V A
21 10 42 ±20 10
104
-55...+150
V µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1
Mar-00
SKP10N60 SKB10N60, SKW10N60
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB1)
Symbol RthJC RthJCD RthJA RthJA
Conditions
TO-220AB TO-247AC TO-263AB
Max. Value
1.2
2.4
62 40 40
Unit K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage Zero gate voltage collector current
Gate-emitter leakage current Transconductance Dynamic Characteristic
V(BR)CES VCE(sat)
VF
VGE(th) ICES
IGES gfs
VGE=0V, IC=500µA VGE = 15V, IC=10A Tj=25°C Tj=150°C VGE=0V, IF=10A Tj=25°C Tj=150°C IC=300µA,VCE=VGE VCE=600V,VGE=0V Tj=25°C Tj=150°C VCE=0V,VGE=20V VCE=20V, IC=10A
Input capacitance Output capacitance Reverse transfer capacitance Gate charge
Ciss Coss Crss QGate
Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current2)
LE IC(SC)
VCE=25V, VGE=0V, f=1MHz
VCC=480V, IC=10A VGE=15V TO-220AB TO-247AC
VGE=15V,tSC≤10µs VCC ≤ 600V, Tj ≤ 150°C
min.
600
1.7 -
1.2 3
-
-
-
Value Typ.
-
2 2.2
1.4 1.25
4
6.7
580 70 50 64
7 13 100
Unit max.
-V
2.4 2.7
1.8 1.65
5
40 1500 100
-
µA
nA S
696 pF 84 60 83 nC
- nH -A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2 Mar-00
SKP10N60 SKB10N60, SKW10N60
Switching .