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SKW10N60 Dataheets PDF



Part Number SKW10N60
Manufacturers Infineon
Logo Infineon
Description Fast S-IGBT
Datasheet SKW10N60 DatasheetSKW10N60 Datasheet (PDF)

SKP10N60 SKB10N60, SKW10N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Very soft, fast recovery anti-parallel EmCon diode C G .

  SKW10N60   SKW10N60



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SKP10N60 SKB10N60, SKW10N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Very soft, fast recovery anti-parallel EmCon diode C G E Type SKP10N60 SKB10N60 SKW10N60 VCE IC VCE(sat) Tj Package 600V 10A 2.2V 150°C TO-220AB TO-263AB TO-247AC Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Symbol VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj , Tstg Ordering Code Q67040-S4217 Q67040-S4218 Q67040-S4241 Value 600 21 10.9 42 42 Unit V A 21 10 42 ±20 10 104 -55...+150 V µs W °C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00 SKP10N60 SKB10N60, SKW10N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB1) Symbol RthJC RthJCD RthJA RthJA Conditions TO-220AB TO-247AC TO-263AB Max. Value 1.2 2.4 62 40 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Dynamic Characteristic V(BR)CES VCE(sat) VF VGE(th) ICES IGES gfs VGE=0V, IC=500µA VGE = 15V, IC=10A Tj=25°C Tj=150°C VGE=0V, IF=10A Tj=25°C Tj=150°C IC=300µA,VCE=VGE VCE=600V,VGE=0V Tj=25°C Tj=150°C VCE=0V,VGE=20V VCE=20V, IC=10A Input capacitance Output capacitance Reverse transfer capacitance Gate charge Ciss Coss Crss QGate Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current2) LE IC(SC) VCE=25V, VGE=0V, f=1MHz VCC=480V, IC=10A VGE=15V TO-220AB TO-247AC VGE=15V,tSC≤10µs VCC ≤ 600V, Tj ≤ 150°C min. 600 1.7 - 1.2 3 - - - Value Typ. - 2 2.2 1.4 1.25 4 6.7 580 70 50 64 7 13 100 Unit max. -V 2.4 2.7 1.8 1.65 5 40 1500 100 - µA nA S 696 pF 84 60 83 nC - nH -A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Mar-00 SKP10N60 SKB10N60, SKW10N60 Switching .


SKB10N60 SKW10N60 K2398


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