K2398 Datasheet PDF | Toshiba





(PDF) K2398 Datasheet PDF

Part Number K2398
Description Field Effect Transistor
Manufacture Toshiba
Total Page 6 Pages
PDF Download Download K2398 Datasheet PDF

Features: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2398 DC−DC Converter and Motor Dr ive Applications Unit: mm l Low drain −source ON resistance : RDS (ON) = 22 mΩ (typ.) l High forward transfer a dmittance : |Yfs| = 27 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement−mode : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Charact eristics Drain−source voltage Drain −gate voltage (RGS = 20 kΩ) Gate− source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipa tion (Tc = 25°C) Single pulse avalanc he energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) C hannel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Thermal Characte ristics Rating 60 60 ±20 45 180 100 2 46 45 10 150 −55~150 Unit V V V A A W mJ A mJ °C °C 1. GATE 2. DRAIN (HE AT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Characteri.

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K2398 datasheet
2SK2398
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2398
DCDC Converter and Motor Drive Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 22 m(typ.)
l High forward transfer admittance : |Yfs| = 27 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 60 V)
l Enhancementmode
: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
60
60
±20
45
180
100
246
45
10
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
1.25
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 165 µH, RG = 25 , IAR = 45 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-07-22

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