K2395

Ordering number:ENN4840 N-Channel Junction Silicon FET 2SK2395 Low-Noise HF Amplifier Applications Applications · AM tuner RF amplifier. · Low-noise amplifier. Features · Large | yfs |. · Small Ciss. · Ultralow noise figure. Package Dimensions unit:mm 2034A [2SK2395] 4.0 2.2 0.4 0.5 0.4 0.4 0.6 1.8 15.0 3.0 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 3.0 3.8nom Conditions Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage V(BR)GDS IG=–10µA, VDS=0 Gate-to-Source Leakage Current IGSS VGS=–10V, VDS=0 Zero-Gate Voltage Drain Current IDSS VDS=5V, VGS=0 Cutoff Voltage VGS(off) VDS=5V, ID=100µA Forward Transfer Admittance | yfs | VDS=5V, VGS=0, f=1kHz Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz * : The 2SK2395 is classified by IDSS as follows : (unit : mA) 6.0 F 12.0 10.0 G 20.0 16.0 H 32.0 1 : Source 2 : Gate 3 : Drain SANYO : SPA Ratings 15 –15 10 50 300 150 –55 to +150 Unit V V mA mA mW ˚C ˚C Ratings min typ –15 6.0* –0.3 20 –0.7 38 10.2 3.1 1.0 max –1.0 32.0* –1.5 Unit V nA mA V mS pF pF dB Any and all SANYO products described or contained herein do not have specifications tha...