5V 4M x 4 CMOS DRAM
®
5V 4M×4 CMOS DRAM (Fast Page mode)
AS4C4M4F0 AS4C4M4F1
Features
• Organization: 4,194,304 words × 4 bits • High spee...
Description
®
5V 4M×4 CMOS DRAM (Fast Page mode)
AS4C4M4F0 AS4C4M4F1
Features
Organization: 4,194,304 words × 4 bits High speed
- 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O Fast page mode Refresh - 4096 refresh cycles, 64 ms refresh interval for
AS4C4M4F0 - 2048 refresh cycles, 32 ms refresh interval for
AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh
TTL-compatible, three-state I/O
JEDEC standard package
- 300 mil, 24/26-pin SOJ - 300 mil, 24/26-pin TSOP Latch-up current ≥ 200 mA ESD protection ≥ 2000 mV Industrial and commercial temperature available
Pin arrangement
SOJ
TSOP
VCC I/O0 I/O1 WE RAS *NC/A11
1 2 3 4 5 6
26 GND 25 I/O3
VCC 1 I/O0 2
24 I/O2
I/O1 3
23 CAS
WE 4
22 OE
RAS 5
21 A9 *NC/A11 6
26 GND 25 I/O3 24 I/O2 23 CAS
22 OE
21 A9
AS4C4M4F0 AS4C4M4F0
A10 8
A0 9 A1 10 A2 11 A3 12 VCC 13
19 A8 18 A7 17 A6 16 A5 15 A4 14 GND
A10 8
A0 9 A1 10 A2 11 A3 12 VCC 13
19 18 17 16 15 14
*NC on 2K refresh version; A11 on 4K refresh version
A8 A7 A6 A5 A4 GND
Pin designation
Pin(s)
Description
A0 to A11
Address inputs
RAS Row address strobe
CAS Column address strobe
WE Write enable
I/O0 to I/O3
Input/output
OE Output enable
VCC GND
Power Ground
Selection guide
Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access time Minimum read or write...
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