HFF630

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF630 APPLICATIONSL High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS=1M ) VGSS Gate-Source Voltage ID *Drain Current Tc=25 * Drain current limited by maximumjunction temperature 5 5 ~1 5 0 150 38W 200V 500V ±30V 9.0A ELECTRICAL CHARACTERISTICS Ta=25 TO-220F 1 1G 2D 3S Symbol Characteristics Min Typ BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current 200 IGSS Gate –Source Leakage Current VGS(th) Gate Threshold Voltage 2.0 RDS(on) Static Drain-Source On-Resistance gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance 85 Crss Reverse Transfer Capacitance 22 td(on) Turn - On Delay Time 11 tr Rise Time 70 td(off) Turn - Off Delay Time 60 tf Fall Time 65 Qg Total Gate Charge 22 Qgs Gate–Source Charge 3.6 Qgd Gate–Drain Charge 10.2 Is Continuous Source Current VSD Rth j-c Diode Forward Voltage Thermal Resistance Junction-to-Case *Pulse Test Pulse Width 300 s Duty Cycle 2% Max Unit Test Conditions V ID=250 A ,VGS=0V VDS =200V VGS=0 100 VGS= 30V , VDS =0V 4.0 V VDS = VGS , ID =250 A ? VGS=10V, ID =4.5A S VDS = 40V , ID =4.5A * pF 110 pF 29 pF 30 nS 150 nS 130 nS 140 nS 29 nC VDS =25V, VGS=0,f=1 VDD =100V, ID =9A RG= 25 * nC nC IS =9.0A , VGS=0 Shantou Huashan E...