HFF640

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF640 APPLICATIONSL High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS=1M ) VGSS Gate-Source Voltage ID *Drain Current Tc=25 * Drain current limited by maximumjunction temperature 5 5 ~1 5 0 150 43W 200V 200V ±20V 18A ELECTRICAL CHARACTERISTICS Ta=25 TO-220F 1 1G 2D 3S Symbol Characteristic s Min Typ BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current 200 IGSS Gate –Source Leakage Current VGS(th) Gate Threshold Voltage 2.0 RDS(on) Static Drain-Source On-Resistance gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn - On Delay Time tr Rise Time td(off) Turn - Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge Is Continuous Source Current VSD Rth j-c Diode Forward Voltage Thermal Resistance Junction-to-Case *Pulse Test Pulse Width 300 s Duty Cycle 2% 175 45 20 145 145 110 45 6.5 22 Max Unit Test Conditions V ID=250 A ,VGS=0V VDS =200V VGS=0 100 VGS= 20V , VDS =0V 4.0 V VDS = VGS , ID =250 A ? VGS=10V, ID =9A S VDS = 40V , ID =9A* pF 230 pF 60 pF 50 nS 300 nS 300 nS 230 nS 58 nC VDS =25V, VGS=0,f=1 VDD =100V, ID =18A RG= 25 * VDS =0.8VDSS nC nC IS =18A , VGS=0 Shantou Huashan...