E-PHEMTUltra Low Noise, Medium Current
0.45-6GHz
Product Features
• Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • ...
E-PHEMTUltra Low Noise, Medium Current
0.45-6GHz
Product Features
Low Noise Figure, 0.5 dB Gain, 17 dB at 2 GHz High Output IP3, +30 dBm Output Power at 1dB comp., +20 dBm Medium Current, 30mA Wide bandwidth External biasing and matching required May be used as replacement a,b for Avago ATF-58143
Typical Applications
Cellular ISM GSM WCDMA WiMax WLAN UNII and HIPERLAN
SAV-581+
CASE STYLE: MMM1362 PRICE: $1.19 ea. QTY. (20)
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications
General Description
SAV-581+ is an ultra-low noise, high IP3
transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We offer these units assembled into a complete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site.
simplified schematic and pin description
DR AIN
G AT E
DR AIN 1
4 SOUR CE
SOUR CE
SOUR CE 2
3 GATE
SOT-343 (SC-70) PACKAGE
Function
Pin Number
Description
Source
2&4
Source terminal, normally connected to ground
Gate
3 Gate used for RF input
Drain
1 Drain used for RF output
* Enhancement mode Pseudomorphic High Electron Mob...