Document
MGA-30216 1.7-2.7GHz ½ Watt High Linearity Amplifier
Data Sheet
Description
Avago Technologies’ MGA-30216 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. The device required simple matching components to achieve wide bandwidth performance since it has a built in input prematch. The adjustable temperature compensated internal bias circuit allowed the device to be operated at either class A or class AB operation The MGA-30216 is housed inside a standard 16 pin QFN 3X3 package.
Applications
• Class A driver amplifier for GSM/PCS/W-CDMA/WiMAX Base Stations.
• General purpose gain block.
Component Image 16 pin QFN 3X3 package
RFgnd 16 Vg 15
GND 14 NC 13
Features
• High linearity and P1dB • Unconditionally Stable across load condition • Built in adjustable temperature compensated internal
bias circuitry • With prematch - required simple matching • GaAs E-pHEMT Technology [1] • Standard QFN 3X3 package • 5V supply • Excellent uniformity in product specifications • Tape-and-Reel packaging option available • MSL-1 and Lead-free • High MTTF for base station application
Specifications
2GHz; 5V, 206mA (typ) • 14.2 dB Gain • 45.3 dBm Output IP3 • 29 dBm Output Power at 1dB gain compression • 48.9% PAE at P1dB • 2.8 dB Noise Figure
30216 YYWW XXXX
NC 12 VDD/RFout 11 VDD/RFout 10
GND
1 Vm 2 Vbias 3 RF in
Notes: 1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices.
NC 9 4 NC
TOP VIEW
BOTTOM VIEW
Notes: Package marking provides orientation and identification “30216” = Device Part Number “YYWW” = Year and Work Week of manufacture “XXXX” = Last 4 digit of Lot number
5 NC 6 NC 7 GND 8 NC
Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 60 V ESD Human Body Model = 300 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control.
Absolute Maximum Rating [1] TA=25oC
Symbol
Parameter
Vdd,max Ids,max Vctrl,max Pin,max Pdiss Tj, max TSTG
Device Voltage, RF output to ground Device Drain Current Control Voltage CW RF Input Power Total Power Dissipation [2] Junction Temperature Storage Temperature
Units V mA V dBm W °C °C
Absolute Max. 5.5 400 5.5 22 2.2 150 -65 to 150
Thermal Resistance [3] qjc = 36°C/W (Vdd=5, Ids=200mA, Tc=85ºC)
Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. This is limited by maximum Vdd and Ids. Derate 28mW/ °C for Tc>70.8 °C. 3. Thermal resistance measured using Infra-Red measurement technique.
Electrical Specifications [4]
TA = 25 °C, Vdd =5V, Vctrl =5V, RF performance at 2.0 GHz, measured on demo board (see Fig. 7) unless otherwise specified.
Symbol
Parameter and Test Condition
Units Min. Typ. Max.
Ids Quiescent current
mA 155 206 255
Ictrl Vctrl current
mA - 7 -
Gain Gain
dB 13 14.0 16
OIP3 [5]
Output Third Order Intercept Point
dBm 41 45.3 -
OP1dB
Output Power at 1dB Gain Compression
dBm
27 29 -
PAE Power Added Efficiency
% - 48.9 -
NF Noise Figure
dB - 2.8 -
S11 Input Return Loss, 50Ω source
dB - -18 -
S22 Output Return Loss, 50Ω load
dB - -22 -
S12 Reverse Isolation
dB - -21 -
Notes: 4. Measurements at 2.0GHz obtained using demo board described in Figure 6 and 7. 5. 2.0GHz OIP3 test condition: FRF1 - FRF2 = 10MHz with input power of -5dBm per tone measured at worse side band 6. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note (if applicable) for more details.
Product Consistency Distribution Charts[1, 2]
CPK = 1.71 Stdev = 9.56
CPK = 2.16 Stdev = 0.67
Figure 1.Ids at 2GHz; LSL=155mA, nominal =206mA, USL=255mA. CPK = 27.5 Stdev = 0.026
Figure 2. OIP3 at 2GHz; LSL=41dBm, nominal=45.3dBm Stdev = 0.26
Figure 3. P1dB at 2GHz; LSL=27dBm, nominal =29dBm
Figure 4. PAE@P1dB 2GHz; nominal=48.9%
CPK = 4.16 Stdev = 0.1
Figure 5. Gain at 2GHz; LSL=13dB, nominal =14.2dB, USL=16dB Notes: 1. Distribution data sample size is 500 samples taken from 4 different wafer lots and 6 different wafers. Future wafers allocated to this product may
have nominal values anywhere between the upper and lower limits. 2. Measurements were made on a characterization test board, which represents a trade-off between optimal OIP3, gain, P1dB and PAE. Circuit trace
losses have not been de-embedded from measurements above.
S-Parameter (Vdd=5V, Vctrl=5V, T=25ºC, unmatched 50 ohm)
Frequency (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6
S11 (dB) -10.71 -8.74 -4.24 -3.03 -.