SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT
SPA1526ZAmplifier
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
NOT FOR NEW DESIGNS
P...
SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT
SPA1526ZAmplifier
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
NOT FOR NEW DESIGNS
Package: SOF-26
NOT FOR NEW dBc DESIGNS
Product Description
RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar
Transistor (HBT) power amplifier. The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package.
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET
InGaP HBT
SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS
ACP versus Channel Power, Over Frequency,
-35.0
WCDMA
880MHz
-40.0
1960MHz 2140MHz
-45.0
-50.0
-55.0
-60.0
-65.0
-70.0
-75.0
10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0
POUT (dBm)
Features
P1dB=32dBm @ 2140MHz ACP=-65dBc with 18.4dBm
Channel Power @ 2140MHz Low Thermal Resistance
Package Power Up/Down Control<1s Robust Class 1C ESD
Applications
Macro/Micro-Cell Driver Stage
Pico-Cell Output Stage GSM, CDMA, TDSCDMA,
WCDMA, IS-95 Single and Multi-Carrier Appli-
cations
Parameter
Small Signal Power Gain
Output Power at 1dB Compression
Output Thi...