Document
SEMICONDUCTOR
TECHNICAL DATA
KGH25N120NDA
General Description
KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such as IH (induction heating), UPS, General inverter and other soft switching applications.
FEATURES High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology
H
A N O
D E d
PP 123
IF C J
R
QB K
G L
M
T
1. GATE 2. COLLECTOR 3. EMITTER
DIM MILLIMETERS A 15.60 +_ 0.20 B 4.80 +_ 0.20 C 19.90 +_ 0.20 D 2.00 +_ 0.20 d 1.00 +_ 0.20 E 3.00 +_ 0.20 F 3.80 +_ 0.20 G 3.50 +_ 0.20
H 13.90 +_ 0.20 I 12.76 +_ 0.20 J 23.40 +_ 0.20
K 1.5+0.15-0.05 L 16.50 +_ 0.30 M 1.40 +_ 0.20
N 13.60 +_ 0.20 O 9.60 +_ 0.20 P 5.45 +_ 0.30
Q 3.20 +_ 0.10 R 18.70 +_ 0.20
T 0.60+0.15-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage Gate-Emitter Voltage
VCES VGES
1200 20
V V
Collector Current Pulsed Collector Current
@TC=25 @TC=100
Diode Continuous Forward Current @TC=100 Diode Maximum Forward Current
40 A IC
25 A ICM* 75 A IF 25 A IFM 110 A
Maximum Power Dissipation Maximum Junction Temperature
@TC=25 @TC=100
300 W PD
120 W Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
TO-3P(N)-E
C
G E
THERMAL CHARACTERISTIC CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE)
SYMBOL R JC R JC
MAX. 0.4 1.2
UNIT /W /W
2009. 2. 19
Revision No : 2
1/6
KGH25N120NDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Static Collector-Emitter Breakdown Voltage Collector Cut-off Current Gate Leakage Current Gate Threshold Voltage Collector-Emitter Saturation Voltage Dynamic Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Ouput Capacitance Reverse Transfer Capacitance
SYMBOL
BVCES ICES IGES
VGE(th) VCE(sat)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres
TEST CONDITION VGE=0V , IC=3mA VGE=0V, VCE=1200V VCE=0V, VGE= 20V VGE=VCE, IC=25mA VGE=15V, IC=25A
VCC=600V, VGE=15V, IC= 25A
VCC=600V, IC=25A, VGE=15V,RG=10 Inductive Load, TC = 25
VCC=600V, IC=25A, VGE=15V, RG=10 Inductive Load, TC = 125
VCE=30V, VGE=0V, f=1MHz
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current
SYMBOL VF trr Irr
TEST CONDITION
IF = 25A
IF = 25A di/dt = 200A/ s
TC=25 TC=125 TC=25 TC=125 TC=25 TC=125
MIN. TYP. MAX. UNIT
1200 3.5 -
5.5 2.2
-V 3 mA 100 nA 7.5 V 2.5 V
- 200 - 20 - 100 - 60 - 50 - 190 - 70 - 4.8 - 1.0 - 5.8 - 60 - 50 - 200 - 100 - 4.9 - 1.4 - 6.3 - 2400 - 200 - 100 -
nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ pF pF pF
MIN. -
TYP. 1.8 1.9 230 300 27 31
MAX. 2.2 330 35 -
UNIT V ns A
2009. 2. 19
Revision No : 2
2/6
KGH25N120NDA
Collector Current IC (A)
Collector - Emitter Voltage VCE (V)
Fig 1. Typical Output Characteristics
180 TC=25 C
160 140 120 100 80 60 40 20
0 02
20V 17V 15V
12V
VGE = 10V
4 6 8 10
Collector - Emitter Voltage VCE (V)
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
4.0 Common Emitter VGE = 15V
3.5
40A
3.0 IC = 25A
2.5
2.0 25
50 75 100
Case Temperature TC ( C)
125
Fig 5. Saturation Voltage vs. VGE
20 Common Emitter TC = 125 C
16
12
8
40A 4
25A 0 IC = 12.5A
0 4 8 12 16
Gate - Emitter Voltage VGE (V)
20
Collector - Emitter Voltage VCE (V)
2009. 2. 19
Revision No : 2
Capacitance (pF)
Collector - Emitter Voltage VCE (V)
Collector Current IC (A)
Fig 2. Typical Saturation Voltage Characteristics
120 Common Emitter
100
VGE = 15V TC = 25 C
TC = 125 C
80
60
40
20
0 0246
Collector - Emitter Voltage VCE (V)
Fig 4. Saturation Voltage vs. VGE
20 Common Emitter TC = 25 C
16
12
8
4 40A 25A
0 IC = 12.5A 0 4 8 12 16 20
Gate - Emitter Voltage VGE (V)
Fig 6. Capacitance Characteristics
4000
3500 Ciss
3000
2500 Coss
2000
1500 Crss
1000
500
0 1
Common Emitter VGE = 0V, f = 1MHZ TC = 25 C
10
Collector - Emitter Voltage VCE (V)
3/6
KGH25N120NDA
Switching Time (ns)
Switching Loss (mJ)
Fig 7. Turn-On Characteristics vs. Gate Resistance
100 td(on)
tr
Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C 10 0 10 20 30 40 50 60 70
Gate Resistance RG (Ω)
Fig 9. Switching Loss vs. Gate Resistance
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
10
TC = 25 C TC = 125 C
Eon
Eoff 1
0 10 20 30 40 50 60 70
Gate Resistance RG (Ω)
Fig 11. Turn-Off Characteristics vs. Collector Current
td(off)
100
Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C
0 20 30 40
Collector Current IC (Α)
tf 50
Switching Time (ns)
2009. 2. 19
Revision No : 2
Switching Loss (mJ)
Switching Time (ns)
Sw.