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KGH25N120NDA Dataheets PDF



Part Number KGH25N120NDA
Manufacturers KEC
Logo KEC
Description NPT IGBTs
Datasheet KGH25N120NDA DatasheetKGH25N120NDA Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KGH25N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such as IH (induction heating), UPS, General inverter and other soft switching applications. FEATURES High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology H A N O D E d PP 123 IF C J R QB K G L M T 1. GATE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS A 15.60 +_ 0.20 B 4.80 +_ 0.20 C 19.90 +_ 0..

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SEMICONDUCTOR TECHNICAL DATA KGH25N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such as IH (induction heating), UPS, General inverter and other soft switching applications. FEATURES High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology H A N O D E d PP 123 IF C J R QB K G L M T 1. GATE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS A 15.60 +_ 0.20 B 4.80 +_ 0.20 C 19.90 +_ 0.20 D 2.00 +_ 0.20 d 1.00 +_ 0.20 E 3.00 +_ 0.20 F 3.80 +_ 0.20 G 3.50 +_ 0.20 H 13.90 +_ 0.20 I 12.76 +_ 0.20 J 23.40 +_ 0.20 K 1.5+0.15-0.05 L 16.50 +_ 0.30 M 1.40 +_ 0.20 N 13.60 +_ 0.20 O 9.60 +_ 0.20 P 5.45 +_ 0.30 Q 3.20 +_ 0.10 R 18.70 +_ 0.20 T 0.60+0.15-0.05 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage Gate-Emitter Voltage VCES VGES 1200 20 V V Collector Current Pulsed Collector Current @TC=25 @TC=100 Diode Continuous Forward Current @TC=100 Diode Maximum Forward Current 40 A IC 25 A ICM* 75 A IF 25 A IFM 110 A Maximum Power Dissipation Maximum Junction Temperature @TC=25 @TC=100 300 W PD 120 W Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature TO-3P(N)-E C G E THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) SYMBOL R JC R JC MAX. 0.4 1.2 UNIT /W /W 2009. 2. 19 Revision No : 2 1/6 KGH25N120NDA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Static Collector-Emitter Breakdown Voltage Collector Cut-off Current Gate Leakage Current Gate Threshold Voltage Collector-Emitter Saturation Voltage Dynamic Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Ouput Capacitance Reverse Transfer Capacitance SYMBOL BVCES ICES IGES VGE(th) VCE(sat) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres TEST CONDITION VGE=0V , IC=3mA VGE=0V, VCE=1200V VCE=0V, VGE= 20V VGE=VCE, IC=25mA VGE=15V, IC=25A VCC=600V, VGE=15V, IC= 25A VCC=600V, IC=25A, VGE=15V,RG=10 Inductive Load, TC = 25 VCC=600V, IC=25A, VGE=15V, RG=10 Inductive Load, TC = 125 VCE=30V, VGE=0V, f=1MHz ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current SYMBOL VF trr Irr TEST CONDITION IF = 25A IF = 25A di/dt = 200A/ s TC=25 TC=125 TC=25 TC=125 TC=25 TC=125 MIN. TYP. MAX. UNIT 1200 3.5 - 5.5 2.2 -V 3 mA 100 nA 7.5 V 2.5 V - 200 - 20 - 100 - 60 - 50 - 190 - 70 - 4.8 - 1.0 - 5.8 - 60 - 50 - 200 - 100 - 4.9 - 1.4 - 6.3 - 2400 - 200 - 100 - nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ pF pF pF MIN. - TYP. 1.8 1.9 230 300 27 31 MAX. 2.2 330 35 - UNIT V ns A 2009. 2. 19 Revision No : 2 2/6 KGH25N120NDA Collector Current IC (A) Collector - Emitter Voltage VCE (V) Fig 1. Typical Output Characteristics 180 TC=25 C 160 140 120 100 80 60 40 20 0 02 20V 17V 15V 12V VGE = 10V 4 6 8 10 Collector - Emitter Voltage VCE (V) Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 4.0 Common Emitter VGE = 15V 3.5 40A 3.0 IC = 25A 2.5 2.0 25 50 75 100 Case Temperature TC ( C) 125 Fig 5. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C 16 12 8 40A 4 25A 0 IC = 12.5A 0 4 8 12 16 Gate - Emitter Voltage VGE (V) 20 Collector - Emitter Voltage VCE (V) 2009. 2. 19 Revision No : 2 Capacitance (pF) Collector - Emitter Voltage VCE (V) Collector Current IC (A) Fig 2. Typical Saturation Voltage Characteristics 120 Common Emitter 100 VGE = 15V TC = 25 C TC = 125 C 80 60 40 20 0 0246 Collector - Emitter Voltage VCE (V) Fig 4. Saturation Voltage vs. VGE 20 Common Emitter TC = 25 C 16 12 8 4 40A 25A 0 IC = 12.5A 0 4 8 12 16 20 Gate - Emitter Voltage VGE (V) Fig 6. Capacitance Characteristics 4000 3500 Ciss 3000 2500 Coss 2000 1500 Crss 1000 500 0 1 Common Emitter VGE = 0V, f = 1MHZ TC = 25 C 10 Collector - Emitter Voltage VCE (V) 3/6 KGH25N120NDA Switching Time (ns) Switching Loss (mJ) Fig 7. Turn-On Characteristics vs. Gate Resistance 100 td(on) tr Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C 10 0 10 20 30 40 50 60 70 Gate Resistance RG (Ω) Fig 9. Switching Loss vs. Gate Resistance Common Emitter VCC = 600V, VGE = 15V IC = 25A 10 TC = 25 C TC = 125 C Eon Eoff 1 0 10 20 30 40 50 60 70 Gate Resistance RG (Ω) Fig 11. Turn-Off Characteristics vs. Collector Current td(off) 100 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 0 20 30 40 Collector Current IC (Α) tf 50 Switching Time (ns) 2009. 2. 19 Revision No : 2 Switching Loss (mJ) Switching Time (ns) Sw.


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