RF1S70N06SM

SEMICONDUCTOR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM December 1995 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Features 70A, 60V rDS(on) = 0.014Ω Temperature Compensated PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve (Single Pulse) +175oC Operating Temperature Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE Description The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFG70N06 TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06 TO-262AA F1S70N06 RF1S70N06SM TO-263AB F1S70N06 NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A. Formerly developmental type TA49007. A DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE Symbol D G S JEDEC TO-263AB GATE SOURCE MA A DRAIN (FLANGE) Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Drain Source Voltage . . . . . . . . . . ....