C5197

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications 2SC5197 Unit: mm Complementary to 2SA1940 Suitable for use in 55-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 8 0.8 80 150 −55 to 150 Unit V V V A A W °C °C Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 120 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 1 A hFE (2) VCE = 5 V, IC = 4 A VCE (sat) IC = 6 A, IB = 0.6 A VBE VCE = 5 V, IC = 4 A fT VCE = 5 V, IC = 1 A Cob VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification R: 55 to 110, O: 80 to 160 JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.) Min Typ. Max Unit ― ― 5.0 µA ― ― 5.0 µA 120 ― ― V 55 ― 160 35 75 ― ― 0.35 2.0 V ― 0.95 1.5 V ― 30 ― MHz ― 120 ― pF 1 2004-07-07 Marking TOSHIBA C5197 Characteristics indicator Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or le...