SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier
SPB2026Z
0.7GHz to 2.2GHz 2W InGaP AMPLIFIER
NOT FOR NEW DESIGNS
Packag...
SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier
SPB2026Z
0.7GHz to 2.2GHz 2W InGaP AMPLIFIER
NOT FOR NEW DESIGNS
Package: SOF-26
NOT FOR NEW DESIGNS
Product Description
RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar
Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated
package. This HBT amplifier is made with InGaP on GaAs device technology and
fabricated with MOCVD for an ideal combination of low cost and high reliability. This
product is well suited for use as a driver stage in macro/micro-cell infrastructure
equipment or as the final output stage in pico-cell infrastructure equipment. It can
run from a 3V to 6V supply. It is prematched to ~5 on the input for broadband
performance and ease of matching at the board level. It features an input power
detector, on/off power control, ESD protection, excellent over-
Optimum Technology Matching® Applied
all robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant.
GaAs HBT GaAs MESFET
p
Vcc = 5V
InGaP HBT
SiGe BiCMOS
Functional Block Diagram
Si BiCMOS
SSZPPB- 2-2002266
SiGe HBT GaAs pHEMT Si CMOS
RFIN
V bias = 5V
A c tiv e Bias
RFOUT
Si BJT GaN HEMT RF MEMS
Pow er Up/Dow n
Co n tr o l
Pow er Detec tor
Features
P1dB=33.8dBm at 5V, 1960 MHz
ACP=-45dBc with 25dBm Channel Power at 1960MHz
On-Chip Input Power Detector Low Thermal Resistance
Package Power Up/Down Control <1s Robust...