C2239

SavantIC Semiconductor wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors DESCRIPTION ·With TO-66 package ·Complement to type 2SA969 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specification 2SC2239 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC Emitter-base voltage Collector current IE Emitter current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 160 160 5 1.5 -1.5 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com Product Specification 2SC2239 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=500A; IB=50mA VBE Base-emitter on voltage IC=500mA ; VCE=5V ICBO Collector cut-off current VCB=160V ;IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=100mA ; VCE=5V Cob Output capacitance IE=0 ; VCB=10V,f=1MHz fT Transition frequency IC=100mA ; VCE=10V 160 V 5V 1.5 V 1.0 V 1.0 µA 1.0 µA 70 240 25 pF 100 MHz hFE Classifications OY 70-140 120-24...