FSS234

Ordering number : ENN6865 Features Low ON-resistance. 4.0V drive. Ultrahigh-speed switching. FSS234 N-Channel Silicon MOSFET FSS234 DC / DC Converter Applications Package Dimensions unit : mm 2116 [FSS234] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 0.595 1.27 0.43 1 : Source 2 : Source 3 : Source 0.2 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Ratings 30 ±20 12 52 2.0 150 --55 to +150 Unit V V A A W °C °C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : S234 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=12A min 30 1.0 12.6 Ratings typ max Unit V 1 µA ±10 µA 2.4 V 18 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to resu...