Document
2SK1835
Silicon N Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
REJ03G0978-0400 Rev.4.00
Jun 04, 2008
D
1 2 3
G S
1. Gate 2. Drain
(Flange) 3. Source
REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 1 of 6
2SK1835
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Symbol VDSS VGSS ID
ID(pulse) Note1 IDR
Pch Note2 Tch Tstg
Ratings 1500 ±20 4 10 4 125 150
–55 to +150
(Ta = 25°C)
Unit V V A A A W
°C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test
Symbol V(BR)DSS
IGSS IDSS VGS(off) RDS(on)
|yfs| Ciss Coss Crss td(on)
tr td(off)
tf VDF trr
Min 1500
— — 2.0 —
0.9 — — — — — — — — —
Typ — — — — 4.6
1.4 1700 230 100
25 80 230 80 0.85 2500
Max — ±1 500 4.0 7.0
— — — — — — — — — —
Unit V µA µA V Ω
(Ta = 25°C)
Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 1200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 15 V Note 3
S ID = 2 A, VDS = 20 V Note 3 pF VDS = 10 V, VGS = 0, pF f = 1 MHz pF ns ID = 2A, VGS = 10 V, ns RL = 15 Ω ns ns V IF = 4 A, VGS = 0 ns IF = 4 A, VGS = 0,
diF/dt = 100 A/µs
REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 2 of 6
Channel Dissipation Pch (W)
2SK1835
Main Characteristics
Power vs. Temperature Derating 200
150
100
50
0 50 100 150 200 Case Temperature TC (°C)
Drain Current ID (A)
Typical Output Characteristics
5
10 V
8V
4 Pulse Test
6V
3
5V 2
1 V GS = 4 V
0 10 20 30 40 50 Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
25 Pulse Test
20
15 3 A
10 2 A
5 ID = 1 A
0 4 8 12 16 20 Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 3 of 6
Static Drain to Source on State Resistance RDS (on) (Ω)
Drain Current ID (A)
Drain Current ID (A)
Maximum Safe Operation Area 50 30
10
10
µs 100
µs 1
3 1 0.3
DC
PW Operatio=n
Operation in this area is limited by
ms
1(T0cm=s2(51°sCh)ot)
R DS (on)
0.1
Ta = 25°C
0.05
10 30 100 300 1000
3000 10000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
4
VDS = 20 V Pulse Test
Tc = –25°C 25°C
3 75°C
2
1
0 2 4 6 8 10 Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
50
20 Pulse Test 10 5
VGS = 10 V 15 V
2
1
0.5 0.2
0.5 1 2
5 10
Drain Current ID (A)
20
2SK1835
Static Drain to Source on State Resistance RDS (on) (Ω)
Static Drain to Source on State Resistance vs. Temperature
25
Pulse Test 20 VGS = 15 V
15
ID= 3 A 10
2A 5 1A
0 –40 0 40 80 120 160
Case Temperature TC (°C)
5000
Body to Drain Diode Reverse Recovery Time
Reverse Recovery Time t rr (ns)
2000
1000
500 di / dt = 100 A / µs VGS = 0, Ta = 25°C
200
100
5 0.1 0.2
0.5 1
2
5 10
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
1000
ID =4A 800
VGS
20 16
600 400 200
0
V DS V DD = 600 V
400 V 250 V VDD = 600 V 400 V 250 V
40 80 120
160
Gate Charge Qg (nc)
12
8
4
0 200
Gate to Source Voltage VGS (V) Switching Time t (ns)
Capacitance C (pF)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance vs. Drain Current
10
5 Pulse Test VDS = 20 V
2
1
0.5
Tc = –25°C 25°C
75°C
0.2
0.1 0.05 0.1 0.2
0.5 1 2
Drain Current ID (A)
5
10000
Typical Capacitance vs. Drain to Source Voltage
1000
Ciss
100
VGS = 0 f = 1 MHz 10 0 10
20
Coss Crss
30 40
50
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
500 td (off)
200
100 tf
50 tr
td (on)
20 VGS = 10 V, duty 1 % PW = 5 µs
10 0.05 0.1 0.2 0.5 1
2
Drain Current ID (A)
5
REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 4 of 6
2SK1835
Normalized Transient Thermal Impedance γS (t) Reverse Drain Current IDR (A)
Reverse Drain Current vs. Source to Drain Voltage 5
Pulse Test
4
3
2
1 V GS = 15 V
0,–5 V
0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width 3
1.0 D = 1 0.5
0.3 0.1 0.03
0.2 0.1 0.05 0.02
0.01
1 shot Pulse
0.01 10 µ
100 µ
1m
10 m
Pulse Width PW (S)
Tc = 25°C
θch – c(t) = γs(t) • θch – c θch – c = 1.0°C / W, Tc = 25°C
P DM
PW T
D
=
PW T
100 m
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor .