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2SK1835 Dataheets PDF



Part Number 2SK1835
Manufacturers Renesas
Logo Renesas
Description Silicon N-Channel MOSFET
Datasheet 2SK1835 Datasheet2SK1835 Datasheet (PDF)

2SK1835 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) REJ03G0978-0400 Rev.4.00 Jun 04, 2008 D 1 2 3 G S 1. Gate 2. Drain (Flange) 3. Source REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 1 of 6 2SK1835 Absolute Maximum Ratings Item Drain to source voltage Gate.

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2SK1835 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) REJ03G0978-0400 Rev.4.00 Jun 04, 2008 D 1 2 3 G S 1. Gate 2. Drain (Flange) 3. Source REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 1 of 6 2SK1835 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 1500 ±20 4 10 4 125 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1500 — — 2.0 — 0.9 — — — — — — — — — Typ — — — — 4.6 1.4 1700 230 100 25 80 230 80 0.85 2500 Max — ±1 500 4.0 7.0 — — — — — — — — — — Unit V µA µA V Ω (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 1200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 15 V Note 3 S ID = 2 A, VDS = 20 V Note 3 pF VDS = 10 V, VGS = 0, pF f = 1 MHz pF ns ID = 2A, VGS = 10 V, ns RL = 15 Ω ns ns V IF = 4 A, VGS = 0 ns IF = 4 A, VGS = 0, diF/dt = 100 A/µs REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 2 of 6 Channel Dissipation Pch (W) 2SK1835 Main Characteristics Power vs. Temperature Derating 200 150 100 50 0 50 100 150 200 Case Temperature TC (°C) Drain Current ID (A) Typical Output Characteristics 5 10 V 8V 4 Pulse Test 6V 3 5V 2 1 V GS = 4 V 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 25 Pulse Test 20 15 3 A 10 2 A 5 ID = 1 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 3 of 6 Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) Drain Current ID (A) Maximum Safe Operation Area 50 30 10 10 µs 100 µs 1 3 1 0.3 DC PW Operatio=n Operation in this area is limited by ms 1(T0cm=s2(51°sCh)ot) R DS (on) 0.1 Ta = 25°C 0.05 10 30 100 300 1000 3000 10000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 5 4 VDS = 20 V Pulse Test Tc = –25°C 25°C 3 75°C 2 1 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 50 20 Pulse Test 10 5 VGS = 10 V 15 V 2 1 0.5 0.2 0.5 1 2 5 10 Drain Current ID (A) 20 2SK1835 Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 25 Pulse Test 20 VGS = 15 V 15 ID= 3 A 10 2A 5 1A 0 –40 0 40 80 120 160 Case Temperature TC (°C) 5000 Body to Drain Diode Reverse Recovery Time Reverse Recovery Time t rr (ns) 2000 1000 500 di / dt = 100 A / µs VGS = 0, Ta = 25°C 200 100 5 0.1 0.2 0.5 1 2 5 10 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1000 ID =4A 800 VGS 20 16 600 400 200 0 V DS V DD = 600 V 400 V 250 V VDD = 600 V 400 V 250 V 40 80 120 160 Gate Charge Qg (nc) 12 8 4 0 200 Gate to Source Voltage VGS (V) Switching Time t (ns) Capacitance C (pF) Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 10 5 Pulse Test VDS = 20 V 2 1 0.5 Tc = –25°C 25°C 75°C 0.2 0.1 0.05 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 10000 Typical Capacitance vs. Drain to Source Voltage 1000 Ciss 100 VGS = 0 f = 1 MHz 10 0 10 20 Coss Crss 30 40 50 Drain to Source Voltage VDS (V) 1000 Switching Characteristics 500 td (off) 200 100 tf 50 tr td (on) 20 VGS = 10 V, duty 1 % PW = 5 µs 10 0.05 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 4 of 6 2SK1835 Normalized Transient Thermal Impedance γS (t) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test 4 3 2 1 V GS = 15 V 0,–5 V 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D = 1 0.5 0.3 0.1 0.03 0.2 0.1 0.05 0.02 0.01 1 shot Pulse 0.01 10 µ 100 µ 1m 10 m Pulse Width PW (S) Tc = 25°C θch – c(t) = γs(t) • θch – c θch – c = 1.0°C / W, Tc = 25°C P DM PW T D = PW T 100 m 1 10 Switching Time Test Circuit Vin Monitor D.U.T Vout Monitor .


AT32UC3L0128 2SK1835 12D-XXS05N


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