OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C pea...
OptiMOS® Power-
Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested
IPB80N06S2-09 IPP80N06S2-09
Product Summary V DS R DS(on),max (SMD version) ID
55 V 8.8 mΩ 80 A
PG-TO263-3-2
PG-TO220-3-1
Type IPB80N06S2-09 IPP80N06S2-09
Package PG-TO263-3-2 PG-TO220-3-1
Ordering Code Marking SP0002-18741 2N0609 SP0002-18740 2N0609
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D= 80 A
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 80
80
320 370 ±20 190 -55 ... +175 55/175/56
Unit A
mJ V W °C
Rev. 1.0
page 1
2006-03-13
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area5)
IPB80N06S2-09 IPP80N06S2-09
min.
Values typ.
Unit max.
- - 0.8 K/W - - 62 - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain cu...
