A1145 Transistor Datasheet

A1145 Datasheet, PDF, Equivalent


Part Number

A1145

Description

Transistor

Manufacture

Toshiba

Total Page 5 Pages
Datasheet
Download A1145 Datasheet


A1145
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1145
Audio Frequency Amplifier Applications
Complementary to 2SC2705.
Small Collector Output Capacitance: Cob = 2.5 pF (typ.)
High Transition Frequency: fT = 200 MHz (typ.)
2SA1145
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage
VCEO
150
V
Emitter-base voltage
VEBO 5 V
Collector current
IC 50 mA
Base current
IB 5 mA
Collector power dissipation
PC 800 mW
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
TO-92MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09

A1145
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = −150 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −1 mA, IB = 0
hFE (Note) VCE = −5 V, IC = −10 mA
VCE (sat) IC = −10 mA, IB = −1 mA
VBE VCE = −5 V, IC = −10 mA
fT VCE = −5 V, IC = −10 mA
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
A1145
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SA1145
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
150
V
80 240
⎯ ⎯ −1.0 V
⎯ ⎯ −0.8 V
200 MHz
2.5 pF
2 2006-11-09


Features TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 Audio Frequ ency Amplifier Applications • Complem entary to 2SC2705. • Small Collector Output Capacitance: Cob = 2.5 pF (typ.) • High Transition Frequency: fT = 20 0 MHz (typ.) 2SA1145 Unit: mm Absolut e Maximum Ratings (Ta = 25°C) Charact eristics Symbol Rating Unit Collect or-base voltage VCBO −150 V Colle ctor-emitter voltage VCEO −150 V Emitter-base voltage VEBO −5 V Coll ector current IC −50 mA Base curren t IB −5 mA Collector power dissipat ion PC 800 mW Junction temperature St orage temperature range Tj 150 °C Ts tg −55 to 150 °C JEDEC JEITA TO- 92MOD ― Note: Using continuously und er heavy loads (e.g. the application of high temperature/current/voltage and t he significant change in temperature, e tc.) may cause this product to decrease in the TOSHIBA 2-5J1A Weight: 0.36 g (typ.) reliability significantly eve n if the operating conditions (i.e. operating temperature/current/voltage, etc.) are .
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