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A1145

Toshiba

Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 Audio Frequency Amplifier Applications • Complementa...


Toshiba

A1145

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Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 Audio Frequency Amplifier Applications Complementary to 2SC2705. Small Collector Output Capacitance: Cob = 2.5 pF (typ.) High Transition Frequency: fT = 200 MHz (typ.) 2SA1145 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage VCEO −150 V Emitter-base voltage VEBO −5 V Collector current IC −50 mA Base current IB −5 mA Collector power dissipation PC 800 mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TO-92MOD ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-5J1A Weight: 0.36 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collecto...




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