MCP6N11 Amplifier Datasheet

MCP6N11 Datasheet PDF, Equivalent


Part Number

MCP6N11

Description

Instrumentation Amplifier

Manufacture

Microchip

Total Page 30 Pages
Datasheet
Download MCP6N11 Datasheet


MCP6N11
MCP6N11
500 kHz, 800 µA Instrumentation Amplifier
Features
• Rail-to-Rail Input and Output
• Gain Set by 2 External Resistors
• Minimum Gain (GMIN) Options:
1, 2, 5, 10 or 100 V/V
• Common Mode Rejection Ratio (CMRR): 115 dB
(typical, GMIN = 100)
• Power Supply Rejection Ratio (PSRR): 112 dB
(typical, GMIN = 100)
• Bandwidth: 500 kHz (typical, Gain = GMIN)
• Supply Current: 800 μA/channel (typical)
• Single Channel
• Enable/VOS Calibration pin: (EN/CAL)
• Power Supply: 1.8V to 5.5V
• Extended Temperature Range: -40°C to +125°C
Typical Applications
• High Side Current Sensor
• Wheatstone Bridge Sensors
• Difference Amplifier with Level Shifting
• Power Control Loops
Design Aids
• Microchip Advanced Part Selector (MAPS)
• Demonstration Board
• Application Notes
Block Diagram
VOUT
RF
RG
VREF
VIP
VIM
VOUT
VFG
RM4
I4
VDD VSS
VREF
VIP
VIM
GM2
GM1
I2 Σ
I1
I3
GM3
VTR
POR
Low Power
VOS Calibration
EN/CAL
Description
Microchip Technology Inc. offers the single MCP6N11
instrumentation amplifier (INA) with Enable/VOS Cali-
bration pin (EN/CAL) and several minimum gain
options. It is optimized for single-supply operation with
rail-to-rail input (no common mode crossover distor-
tion) and output performance.
Two external resistors set the gain, minimizing gain
error and drift-over temperature. The reference voltage
(VREF) shifts the output voltage (VOUT).
The supply voltage range (1.8V to 5.5V) is low enough
to support many portable applications. All devices are
fully specified from -40°C to +125°C.
These parts have five minimum gain options (1, 2, 5, 10
and 100 V/V). This allows the user to optimize the input
offset voltage and input noise for different applications.
Typical Application Circuit
VDD
10 Ω
IDD
U1
MCP6N11
RF
VFG 200 kΩ
VBAT
+1.8V
to
+5.5V
VOUT
RG
10 kΩ
VREF
Package Types
MCP6N11
SOIC
MCP6N11
2×3 TDFN *
VFG 1
VIM 2
VIP 3
VSS 4
8 EN/CAL VFG 1
8 EN/CAL
7 VDD
6 VOUT
5 VREF
VIM 2 EP 7 VDD
VIP 3 9 6 VOUT
VSS 4
5 VREF
* Includes Exposed Thermal Pad (EP); see Table 3-1.
© 2011 Microchip Technology Inc.
DS25073A-page 1

MCP6N11
MCP6N11
Minimum Gain Options
Table 1 shows key specifications that differentiate
between the different minimum gain (GMIN) options.
See Section 1.0 “Electrical Characteristics”,
Section 6.0 “Packaging Information” and Product
Identification System for further information on GMIN.
TABLE 1: KEY DIFFERENTIATING SPECIFICATIONS
Part No.
GMIN VOS VOS/TA CMRR (dB) PSRR
(V/V) (±mV) (±µV/°C)
Min.
(dB)
Nom. Max.
Typ. VDD = 5.5V Min.
VDMH
(V)
Max.
GBWP
(MHz)
Nom.
Eni
(µVP-P)
Nom.
(f = 0.1 to 10 Hz)
eni
(nV/Hz)
Nom.
(f = 10 kHz)
MCP6N11-001
MCP6N11-002
MCP6N11-005
MCP6N11-010
MCP6N11-100
1
2
5
10
100
3.0
2.0
0.85
0.50
0.35
90
45
18
9.0
2.7
70 62 2.70 0.50
78 68 1.35 1.0
80 75 0.54 2.5
81 81 0.27 5.0
88 86 0.027 35
570
285
114
57
18
950
475
190
95
35
DS25073A-page 2
© 2011 Microchip Technology Inc.


Features MCP6N11 500 kHz, 800 µA Instrumentatio n Amplifier Features • Rail-to-Rail Input and Output • Gain Set by 2 Exte rnal Resistors • Minimum Gain (GMIN) Options: 1, 2, 5, 10 or 100 V/V • Com mon Mode Rejection Ratio (CMRR): 115 dB (typical, GMIN = 100) • Power Supply Rejection Ratio (PSRR): 112 dB (typica l, GMIN = 100) • Bandwidth: 500 kHz ( typical, Gain = GMIN) • Supply Curren t: 800 μA/channel (typical) • Single Channel • Enable/VOS Calibration pin : (EN/CAL) • Power Supply: 1.8V to 5. 5V • Extended Temperature Range: -40 C to +125°C Typical Applications • High Side Current Sensor • Wheatstone Bridge Sensors • Difference Amplifie r with Level Shifting • Power Control Loops Design Aids • Microchip Advanc ed Part Selector (MAPS) • Demonstrati on Board • Application Notes Block Di agram VOUT RF RG VREF VIP VIM VOUT VF G RM4 I4 VDD VSS VREF VIP VIM GM2 GM1 I2 Σ I1 I3 GM3 VTR POR Low Pow er VOS Calibration EN/CAL Description Microchip Technology Inc. offers the single MCP6N11 instrumentat.
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