isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Mi...
isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT64F
-60
VCER
Collector-Emitter Voltage
BDT64AF
-80
V
BDT64BF -100
BDT64CF -120
BDT64F
-60
VCEO
Collector-Emitter Voltage
BDT64AF
-80
V
BDT64BF -100
BDT64CF -120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.5
A
39
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 5.7 ℃/W
BDT64F/AF/BF/CF
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isc Silicon
PNP Darlington Power
Transistor BDT64F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDT64F
-60
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT64AF IC= -30mA ;IB=0
BDT64BF
-80 -100
V
BDT64CF
-120
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA
-2.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -10...