SSF1090

SSF1090 Feathers:  Advanced trench process technology  Special designed for Convertors and power controls  High density cell design for ultra low Rdson ID =15A BV=100V Rdson=0.06Ω (Typ.)  Fully characterized Avalanche voltage and current  Avalanche Energy 100% test Description: The SSF1090 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1090 is assembled in high reliability and qualified assembly house. Application:  Power switching application SSF1090 TOP View (TO-220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① PD@TC=25ْC Power dissipation Linear derating factor VGS Gate-to-Source voltage EAS Single pulse avalanche energy ② EAR Repetitive avalanche energy dv/dt Peak diode recovery voltage TJ TSTG Operating Junction and Storage Temperature Range Max. 15 10 60 42 0.4 ±20 240 TBD 28 –55 to +175 Units A W W/ Cْ V mJ mJ v/ns ْC Thermal Resistance Parameter Min. Typ. RθJC Junction-to-case — 3.6 RθJA Junction-to-ambient —— *When mounted on the minimum pas size recommended（PCB Mount） Max. — 69 Units C/W Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter BVDSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate thresho...