DATA SHEET
SILICON POWER TRANSISTOR
2SA1650
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1650 is a ...
DATA SHEET
SILICON POWER
TRANSISTOR
2SA1650
PNP SILICON EPITAXIAL
TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1650 is a mold power
transistor developed for highspeed switching and features a very low collector-to-emitter saturation. This
transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.
PACKAGE DRAWING (UNIT: mm)
FEATURES Mold package that does not require an insulating board or
insulation bushing Fast switching speed Low collector-to-emitter saturation voltage:
VCE(sat) ≤ −0.3 V (MAX.) @IC = −3 A
QUALITY GRADES Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
Electrode Connection <1> Base <2> Collector <3> Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current Base current Total power dissipation Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ID(DC) IC(pulse) IB(DC) PT PT Tj Tstg
Conditions
PW ≤ 300 µs, duty cycle ≤ 10% Tc = 25°C Ta = 25°C
Ratings −150 −100 −7.0 −5.0 −10 −2.5 25 2.0 150
−55 to +150
Unit V V V A A A W W °C °C
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