Power Transistors
2SC4576
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Uni...
Power
Transistors
2SC4576
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCER VCEO VEBO ICP IC
PC
1400 1400 700
5 1.0 0.3 20 1.4
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V V A A
W
˚C ˚C
13.5±0.5 Solder Dip
15.4±0.3
2.8±0.2 1.5±0.2
10.5±0.5 9.5±0.2 8.0±0.2
4.5±0.2 1.4±0.1
6.7±0.3 2.8±0.2
φ3.7±0.2
5.08±0.5
0.8±0.1 2.54±0.3
9.5
2.5±0.2 0.6±0.1
123
1:Base 2:Collector 3:Emitter TO–220 Package(b)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
ICBO IEBO VCEO VCER VEBO hFE VCE(sat) VBE(sat) fT ton tstg tf
VCB = 1100V, IE = 0 VEB = 4V, IC = 0 IC = 1mA, IB = 0 IC = 1mA, RBE = 100Ω IE = 1mA, IC = 0 VCE = 5V, IC = 30mA IC = 60mA, IB = 6mA IC = 60mA, IB = 6mA VCE = 10V, IC = 30mA, f = 1MHz IC = ...
