2SC2669
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2669
High Frequency Amplifier Application...
2SC2669
TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type (PCT process)
2SC2669
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV, IF stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
35 30 4 50 10 200 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Collector-base time constant
Power gain
ICBO IEBO
VCB = 35 V, IE = 0 VEB = 4 V, IC = 0
hFE (Note)
VCE = 12 V, IC = 2 mA
VCE (sat) VBE
IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA
fT Cob Cc・rbb’
Gpe
VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCC = 6 V, IE = -1 mA, f = 10.7 MHz (Figure 1)
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. Max Unit
¾ ¾ 0.1 mA ¾ ¾ 1.0 mA
40 ¾ 240
¾ ¾ 0.4 V
¾ ¾ 1.0 V
100 ¾
¾ MHz
¾ 2.0 3.2 pF
¾ ¾ 50 ps
27 30 33 dB
1 2003-03-27
2SC2669
Figure 1 Gpe Test Circuit
Y Parameters (typ.)
(1) (common emitter f...