FDP5N50 / FDPF5N50 N-Channel MOSFET
FDP5N50 / FDPF5N50
N-Channel MOSFET
500V, 5A, 1.4Ω
Features
• RDS(on) = 1.15Ω ( Typ...
FDP5N50 / FDPF5N50 N-Channel MOSFET
FDP5N50 / FDPF5N50
N-Channel MOSFET
500V, 5A, 1.4Ω
Features
RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A Low gate charge ( Typ. 11nC) Low Crss ( Typ. 5pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant
December 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.
D
G
GDS
TO-220 FDP Series
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS
ID
IDM EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
-Continuous (TC = 25oC) -Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1) (Note 2) (Note 1) (Note 1) (Note...