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FDPF5N50 Dataheets PDF



Part Number FDPF5N50
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDPF5N50 DatasheetFDPF5N50 Datasheet (PDF)

FDP5N50 / FDPF5N50 N-Channel MOSFET FDP5N50 / FDPF5N50 N-Channel MOSFET 500V, 5A, 1.4Ω Features • RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant December 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been es.

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FDP5N50 / FDPF5N50 N-Channel MOSFET FDP5N50 / FDPF5N50 N-Channel MOSFET 500V, 5A, 1.4Ω Features • RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant December 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDP5N50 FDPF5N50 500 ±30 5 5* 3 3* 20 20* 225 5 8.5 4.5 85 28 0.67 0.22 -55 to +150 300 Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP5N50 1.4 0.5 62.5 FDPF5N50 4.5 62.5 Units V V A A mJ A mJ V/ns W W/oC oC oC Units oC/W ©2007 Fairchild Semiconductor Corporation FDP5N50 / FDPF5N50 Rev. A 1 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP5N50 Device FDP5N50 Package TO-220 Reel Size - Tape Width - FDPF5N50 FDPF5N50 TO-220F - - Quantity 50 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to 25oC VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V 500 - - On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 2.5A VDS = 20V, ID = 2.5A (Note 4) 3.0 - Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 5A VGS = 10V (Note 4, 5) - - Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 5A RG = 25Ω (Note 4, 5) - Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current ISM Maximum Pulsed Drain to Source Diode Forward Current VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 5A trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, ISD = 5A dIF/dt = 100A/μs Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 18mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics (Note 4) - Typ. 0.6 - 1.15 4.3 480 66 5 11 3 5 13 22 28 20 300 1.8 Max. Units - - 1 10 ±100 V V/oC μA nA 5.0 V 1.4 Ω -S 640 pF 88 pF 8 pF 15 nC - nC - nC 36 ns 54 ns 66 ns 50 ns 5A 20 A 1.4 V - ns - μC FDP5N50 / FDPF5N50 Rev. A 2 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 20 VGS = 15.0V 10 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 1 ID,Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance 0.1 0.04 0.1 *Notes: 1. 250μs Pulse Test 2. TC = 25oC 1 10 VDS,Drain-Source Voltage[V] 30 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3.0 2.5 2.0 VGS = 10V 1.5 VGS = 20V 1.0 0 *Note: TJ = 25oC 369 ID, Drain Current [A] 12 Figure 5. Capacitance Characteristics 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 750 *Note: 1. VGS = 0V 2. f = 1MHz Ciss 500 Coss 250 Crss 0 0.1 1 10 VDS, Drain-Source Voltage [V] 30 Capacitances [pF] Figure 2. Transfer Characteristics 20 10 ID,Drain Current[A] 150oC 25oC 1 -55oC 0.1 4 *Notes: 1. VDS = 20V 2. 250μs Pulse Test.


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