Document
FDP5N50 / FDPF5N50 N-Channel MOSFET
FDP5N50 / FDPF5N50
N-Channel MOSFET
500V, 5A, 1.4Ω
Features
• RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant
December 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.
D
G
GDS
TO-220 FDP Series
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS
ID
IDM EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
-Continuous (TC = 25oC) -Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1) (Note 2) (Note 1) (Note 1) (Note 3)
FDP5N50 FDPF5N50 500 ±30
5 5* 3 3* 20 20*
225 5 8.5 4.5
85 28 0.67 0.22
-55 to +150
300
Symbol
RθJC RθCS RθJA
Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient
FDP5N50 1.4 0.5 62.5
FDPF5N50 4.5 62.5
Units V V
A
A mJ A mJ V/ns W W/oC oC oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation FDP5N50 / FDPF5N50 Rev. A
1
www.fairchildsemi.com
FDP5N50 / FDPF5N50 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP5N50
Device FDP5N50
Package TO-220
Reel Size -
Tape Width -
FDPF5N50
FDPF5N50
TO-220F
-
-
Quantity 50 50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
ID = 250μA, Referenced to 25oC
VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V
500
-
-
On Characteristics
VGS(th) RDS(on) gFS
Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance
VGS = VDS, ID = 250μA VGS = 10V, ID = 2.5A VDS = 20V, ID = 2.5A
(Note 4)
3.0 -
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs
Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V f = 1MHz
VDS = 400V, ID = 5A VGS = 10V
(Note 4, 5)
-
-
Switching Characteristics
td(on) tr td(off) tf
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDD = 250V, ID = 5A RG = 25Ω
(Note 4, 5)
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 5A
trr Reverse Recovery Time Qrr Reverse Recovery Charge
VGS = 0V, ISD = 5A dIF/dt = 100A/μs
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 18mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
Typ.
0.6
-
1.15 4.3
480 66 5 11 3 5
13 22 28 20
300 1.8
Max. Units
-
-
1 10 ±100
V V/oC
μA nA
5.0 V 1.4 Ω
-S
640 pF 88 pF 8 pF 15 nC - nC
- nC
36 ns 54 ns 66 ns 50 ns
5A 20 A 1.4 V - ns - μC
FDP5N50 / FDPF5N50 Rev. A
2 www.fairchildsemi.com
FDP5N50 / FDPF5N50 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20 VGS = 15.0V 10 10.0V
8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
1
ID,Drain Current[A]
RDS(ON) [Ω], Drain-Source On-Resistance
0.1
0.04 0.1
*Notes: 1. 250μs Pulse Test 2. TC = 25oC
1 10 VDS,Drain-Source Voltage[V]
30
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
3.0
2.5
2.0 VGS = 10V
1.5 VGS = 20V
1.0 0
*Note: TJ = 25oC
369 ID, Drain Current [A]
12
Figure 5. Capacitance Characteristics
1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
750 *Note: 1. VGS = 0V 2. f = 1MHz
Ciss
500
Coss
250
Crss
0 0.1 1 10
VDS, Drain-Source Voltage [V]
30
Capacitances [pF]
Figure 2. Transfer Characteristics
20
10
ID,Drain Current[A]
150oC
25oC 1
-55oC
0.1 4
*Notes: 1. VDS = 20V 2. 250μs Pulse Test.