Philips Semiconductors
TrenchMOS™ transistor Logic level FET
Product specification
PHP45N03LT
FEATURES
• ’Trench’ tech...
Philips Semiconductors
TrenchMOS™
transistor Logic level FET
Product specification
PHP45N03LT
FEATURES
’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance
SYMBOL
g
d s
QUICK REFERENCE DATA VDSS = 30 V ID = 45 A
RDS(ON) ≤ 24 mΩ (VGS = 5 V) RDS(ON) ≤ 21 mΩ (VGS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power
transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP45N03LT is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING
PIN DESCRIPTION 1 gate 2 drain 3 source tab drain
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR ±VGS ID ID IDM
Ptot
Tstg, Tj
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature
-
RGS = 20 kΩ -
Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C -
THERMAL RESISTANCES
SYMBOL Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to mounting base Thermal resistance junction to ambient
CONDITIONS -
in free air
MIN.
- 55
MAX.
30 30 15 45 36 180 86 175
UNIT
V V V A A A W ˚C
TYP. -
60
MAX. 1.75
-
UNI...