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RQ3E080GN Dataheets PDF



Part Number RQ3E080GN
Manufacturers Rohm
Logo Rohm
Description Nch 30V 18A Middle Power MOSFET
Datasheet RQ3E080GN DatasheetRQ3E080GN Datasheet (PDF)

RQ3E080GN   Nch 30V 18A Middle Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 30V 16.7mΩ ±18A 14W lFeatures 1) Low on - resistance. 2) High power package (HSMT8). 3) Pb-free lead plating ; RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. lOutline HSMT8          lInner circuit   lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 12 3000 Taping code TB Marking lAbsolute maximum rating.

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RQ3E080GN   Nch 30V 18A Middle Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 30V 16.7mΩ ±18A 14W lFeatures 1) Low on - resistance. 2) High power package (HSMT8). 3) Pb-free lead plating ; RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. lOutline HSMT8          lInner circuit   lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 12 3000 Taping code TB Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) E080GN Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current Tc = 25°C Ta = 25°C ID*1 ID ±18 A ±8 A Pulsed drain current IDP*2 ±32 A Gate - Source voltage VGSS ±20 V Avalanche current, single pulse IAS*3 8 A Avalanche energy, single pulse EAS*3 4.9 mJ Power dissipation PD*1 14 W PD*4 2.0 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃                                                                                          www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160517 - Rev.002     RQ3E080GN            lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient                 Datasheet                      Symbol RthJC*1 RthJA*4 Values Min. Typ. Max. - - 8.9 - - 62.5 Unit ℃/W ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient  ΔV(BR)DSS  ID = 1mA    ΔTj     referenced to 25℃ Zero gate voltage drain current IDSS VDS = 24V, VGS = 0V Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V Gate threshold voltage Gate threshold voltage temperature coefficient VGS(th) VDS = VGS , ID = 1mA  ΔVGS(th)   ID = 1mA    ΔTj     referenced to 25℃ Static drain - source on - state resistance RDS(on)*5 VGS = 10V, ID = 8A VGS = 4.5V, ID = 8A Gate resistance RG f=1MHz, open drain Forward Transfer Admittance |Yfs|*5 VDS = 5V, ID = 8A Values Unit Min. Typ. Max. 30 - - V - 28 - mV/℃ - - 1 μA - - ±100 nA 1.2 - 2.5 V - -3.87 - mV/℃ - 12.9 16.7 mΩ - 17.5 31.2 - 2.5 - Ω 7 - -S *1 Tc = 25℃, Limited only by maximum temperature allowed. *2 Pw≦10μs , Duty cycle≦1% *3 L ⋍ 0.1mH, VDD = 15V, RG = 25Ω, STARTING Tj = 25℃ Fig.3-1,3-2 *4 Mounted on a Cu board (40×40×0.8mm) *5 Pulsed                                               www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/10                                            20160517 - Rev.002 RQ3E080GN        lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Ciss Coss Crss td(on)*5 tr*5 td(off)*5 tf*5 VGS = 0V VDS = 15V f = 1MHz VDD ⋍ 15V,VGS = 10V ID = 4A RL ⋍ 3.75Ω RG = 10Ω                 Datasheet Values Min. Typ. Max. - 295 - 89 - 24 - 6.9 - 3.6 - 17.3 - 2.4 - Unit pF ns lGate charge characteristics (Ta = 25°C) Parameter Symbol Conditions Total gate charge Gate - Source charge Gate - Drain charge Qg*5 Qgs*5 Qgd*5 VDD ⋍ 15V ID = 8A VGS = 10V VGS = 4.5V Values Min. Typ. Max. - 5.8 - 2.8 - 1.4 - 0.7 - Unit nC lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Continuous forward current Pulse forward current Forward voltage Reverse recovery time Reverse recovery charge IS ISP*2 VSD*5 trr*5 Qrr*5 Ta = 25℃ VGS = 0V, IS = 1.67A IS = 8A, VGS=0V di/dt = 100A/μs - - 1.67 - - 32 - - 1.2 - 16.8 - 8.1 - Unit A A V ns nC                                                                                            www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 3/10 20160517 - Rev.002 RQ3E080GN        lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve          Datasheet Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal     Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power     dissipation                                                                                            www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 4/10 20160517 - Rev.002 RQ3E080GN        lElectrical ch.


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