Document
RQ3E080GN
Nch 30V 18A Middle Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
30V 16.7mΩ
±18A 14W
lFeatures
1) Low on - resistance. 2) High power package (HSMT8). 3) Pb-free lead plating ; RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested.
lOutline
HSMT8
lInner circuit
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching
Type Tape width (mm) Basic ordering unit (pcs)
12 3000
Taping code
TB
Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
E080GN
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current
Tc = 25°C Ta = 25°C
ID*1 ID
±18 A ±8 A
Pulsed drain current
IDP*2 ±32 A
Gate - Source voltage
VGSS
±20 V
Avalanche current, single pulse
IAS*3 8 A
Avalanche energy, single pulse
EAS*3
4.9 mJ
Power dissipation
PD*1 14 W PD*4 2.0 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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1/10
20160517 - Rev.002
RQ3E080GN
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient
Datasheet
Symbol
RthJC*1 RthJA*4
Values Min. Typ. Max.
- - 8.9 - - 62.5
Unit
℃/W ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage temperature coefficient
ΔV(BR)DSS ID = 1mA ΔTj referenced to 25℃
Zero gate voltage drain current
IDSS VDS = 24V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage temperature coefficient
VGS(th) VDS = VGS , ID = 1mA ΔVGS(th) ID = 1mA ΔTj referenced to 25℃
Static drain - source on - state resistance
RDS(on)*5 VGS = 10V, ID = 8A VGS = 4.5V, ID = 8A
Gate resistance
RG f=1MHz, open drain
Forward Transfer Admittance
|Yfs|*5 VDS = 5V, ID = 8A
Values Unit
Min. Typ. Max. 30 - - V
- 28 - mV/℃
- - 1 μA
- - ±100 nA 1.2 - 2.5 V
- -3.87 - mV/℃
- 12.9 16.7 mΩ
- 17.5 31.2
- 2.5 -
Ω
7 - -S
*1 Tc = 25℃, Limited only by maximum temperature allowed. *2 Pw≦10μs , Duty cycle≦1% *3 L ⋍ 0.1mH, VDD = 15V, RG = 25Ω, STARTING Tj = 25℃ Fig.3-1,3-2 *4 Mounted on a Cu board (40×40×0.8mm) *5 Pulsed
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
2/10
20160517 - Rev.002
RQ3E080GN
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time
Ciss Coss Crss td(on)*5 tr*5 td(off)*5 tf*5
VGS = 0V VDS = 15V f = 1MHz
VDD ⋍ 15V,VGS = 10V
ID = 4A RL ⋍ 3.75Ω RG = 10Ω
Datasheet
Values Min. Typ. Max.
- 295 - 89 - 24 - 6.9 - 3.6 - 17.3 - 2.4 -
Unit pF ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge Gate - Drain charge
Qg*5
Qgs*5 Qgd*5
VDD ⋍ 15V ID = 8A
VGS = 10V VGS = 4.5V
Values Min. Typ. Max.
- 5.8 - 2.8 - 1.4 - 0.7 -
Unit nC
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
Continuous forward current Pulse forward current Forward voltage Reverse recovery time Reverse recovery charge
IS ISP*2 VSD*5 trr*5 Qrr*5
Ta = 25℃
VGS = 0V, IS = 1.67A IS = 8A, VGS=0V di/dt = 100A/μs
- - 1.67 - - 32 - - 1.2 - 16.8 - 8.1 -
Unit
A A V ns nC
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20160517 - Rev.002
RQ3E080GN
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power dissipation
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
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20160517 - Rev.002
RQ3E080GN
lElectrical ch.