C5690

Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Package Dimensions unit : mm 2174A [2SC5690] 16.0 3.4 5.6 3.1 22.0 8.0 0.8 21.0 5.0 4.0 2.8 2.0 2.1 0.7 0.9 20.4 Specifications Absolute Maximum Ratings at Ta=25°C 12 3 5.45 5.45 3.5 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation Junction Temperature Storage Temperature PC Tj Tstg Electrical Characteristics at Ta=25°C Tc=25°C Conditions Ratings 1500 800 5 15 35 3.0 85 150 --55 to +150 Unit V V V A A W W °C °C Parameter Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE1 hFE2 VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=10.8A, IB=2.7A IC=10.8A, IB=2.7A VCE=5V, IC=1A VCE=5V, IC=12A min 800 40 10 4 Ratings typ max 10 1.0 130 3 1.5 Unit µA mA V mA V V 7 Continued on next page. Any and all SANYO products described or contained herein do not have speci...