Document
Agilent AMMC-6530 5– 30 GHz Image Reject Mixer
Data Sheet
Description Agilent’s AMMC-6530 is an image reject mixer that operates from 5 to 30 GHz. The cold channel FET mixer is designed to be an easy-to-use component for any chip and wire application. It can be used drain pumped for low conversion loss applications, or when gate pumped the mixer can provide high linearity for SSB up-conversion. An external 90-degree hybrid is used to achieve image rejection and a -1V voltage reference is needed. Intended applications include microwave radios, 802.16, VSAT, and satellite receivers. Since this one mixer can cover several bands, the AMMC-6530 can reduce part inventory. The integrated mixer eliminates complex tuning and assembly processes typically required by hybrid (discrete-FET or diode) mixers. For improved reliability and moisture protection, the die is passivated at the active areas.
Features • Broad Band Performance 5– 30 GHz
• Low Conversion Loss of 8 dB • High Image Rejection of 15 – 20 dB
• Good 3rd Order Intercept of +18 dBm
• Single -1V, no current Supply Bias
Chip Size: 1300 x 1400 µm Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Vg drain
IF1
Applications • Microwave Radio Systems
• Satellite VSAT, DBS Up/Down Link
• LMDS & Pt-Pt mmW Long Haul
• Broadband Wireless Access (including 802.16 and 802.20 WiMax)
• WLL and MMDS loops
• Commercial grade military
IF2
gate
Vg
Absolute Maximum Ratings[1] Symbol Parameters/Conditions
Units Min. Max.
Vg Gate Supply Voltage
V 0 -3
Pin CW Input Power
dBm 25
Tch Operating Channel Temperature
°C
+150
Tstg Storage Case Temperature
°C -65 +150
Tmax Max. Assembly Temp (60 sec max) °C
+300
Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.
AMMC-6530 DC Specifications/Physical Properties[1]
Symbol Parameters and Test Conditions
Ig Gate Supply Current (under any RF power drive and temperature) Vg Gate Supply Operating Voltage Note: 1. Ambient operational temperature TA=25°C unless otherwise noted.
Units mA V
Typ. 0 -1V
AMMC-6530 Typical Performance [2, 3] (TA= 25°C, Vg= -1V, IF frequency = 1 GHz, Zo=50 Ω)
Symbol
Parameters and Test Conditions
Units
Gate Pumped
Drain Pumped
FRF RF Frequency Range FLO LO Frequency Range FIF IF Frequency Range
GHz 5 – 30 GHz 5 – 30 GHz DC – 5
5 – 30 5 – 30 DC – 5
Down Conversion Up Conversion Down Conversion
PLO LO Port Pumping Power CG RF to IF Conversion Gain
dBm >10 dB -10
RL_RF
RF Port Return Loss
dB 5
RL_LO
LO Port Return Loss
dB 10
RL_IF
IF Port Return Loss
dB 10
IR Image Rejection Ratio
dB 15
LO-RF Iso.
LO to RF Port Isolation
dB 22
LO-IF Iso.
LO to IF Port Isolation
dB 25
RF-IF Iso.
RF to IF Port Isolation
dB 15
IIP3 Input IP3, Fdelta=100 MHz, Prf = -10 dBm, Plo = 15 dBm
dBm 18
P-1 Input Port Power at 1dB gain compression point, Plo=+10 dBm
dBm 8
NF Noise Figure
dB 10
Notes:
2. Small/Large signal data measured in a fully de-embedded test fixture form TA = 25°C. 3. Specifications are derived from measurements in a 50Ω test environment.
>0 >10 -15 -8 5 10 10 5 10 10 15 15 25 22 25 25 15 15 — 10
—0
— 12
AMMC-6530 RF Specifications in Drain Pumped Test Configuration[4, 5, 6] (TA= 25°C, Vg= -1.0V, PLO= +10 dBm, Zo = 50 Ω)
Symbol Parameters and Test Conditions
Units Min Typ. Max
CG
Conversion Gain
f = 7 GHz
dB -12.0 -10.5
f = 18 GHz
dB -10.0 -8.0
f = 28 GHz
dB -12.5 -10.0
IR Image Rejection Ratio
dB -23.5 -18
Notes:
4. Performance verified 100% on-wafer. 5. 100% on-wafer RF testing is done at RF frequency = 7, 18, and 28 GHz; IF frequency = 2 GHz. 6. The external 90 degree hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency 1.0 – 2.0 GHz.
2
AMMC-6530 Typical Performance under Gate Pumped Down Conversion Operation (TA = 25°C, Vg = -1V, Zo = 50Ω)
RF
Vg drain
LSB
IF1
gate
Vg
IF2
USB
-1V
LO
Note: The external 90° hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency is 1.0 – 2.0 GHz.
Highly linear down conversion or up conversion mixer application (Gate pumped mixer operation)
CONVERSION GAIN (dB)
0
-5
-10
-15
-20
-25
-30
-35
-40 USB(dB)
-45 LSB(dB)
-50 5 10 15 20 25 30 FREQUENCY (GHz)
Figure 1. Conversion Gain with IF terminated for Low Side Conversion LO=+10 dBm, IF=1 GHz.
20
15
10
5
0 5 10 15 20
FREQUENCY (GHz)
Figure 4. Noise Figure. LO=+7 dBm, IF=1 GHz.
25
30
IIP3 (dBm)
CONVERSION GAIN (dB)
0 -5 -10 -15 -20 -25 -30 -35 -40
USB(dB) -45 LSB(dB) -50
5 10 15 20 25 30 FREQUENCY (GHz)
Figure 2. Conversion Gain with IF terminated for High Side Conversion LO=+10 dBm, IF=1 GHz.
25
20
15
10 Plo=15(dBm) Plo=10(dBm)
5 5 10 15 20 25 30 FREQUENCY (GHz)
Figure 5. Input 3rd Order Intercept Point. IF=1 GHz.
CONVERSION GAIN (dB)
INPUT .