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AMMC-6530 Dataheets PDF



Part Number AMMC-6530
Manufacturers Agilent
Logo Agilent
Description 5-30 GHz Image Reject Mixer
Datasheet AMMC-6530 DatasheetAMMC-6530 Datasheet (PDF)

Agilent AMMC-6530 5– 30 GHz Image Reject Mixer Data Sheet Description Agilent’s AMMC-6530 is an image reject mixer that operates from 5 to 30 GHz. The cold channel FET mixer is designed to be an easy-to-use component for any chip and wire application. It can be used drain pumped for low conversion loss applications, or when gate pumped the mixer can provide high linearity for SSB up-conversion. An external 90-degree hybrid is used to achieve image rejection and a -1V voltage reference is needed.

  AMMC-6530   AMMC-6530


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Agilent AMMC-6530 5– 30 GHz Image Reject Mixer Data Sheet Description Agilent’s AMMC-6530 is an image reject mixer that operates from 5 to 30 GHz. The cold channel FET mixer is designed to be an easy-to-use component for any chip and wire application. It can be used drain pumped for low conversion loss applications, or when gate pumped the mixer can provide high linearity for SSB up-conversion. An external 90-degree hybrid is used to achieve image rejection and a -1V voltage reference is needed. Intended applications include microwave radios, 802.16, VSAT, and satellite receivers. Since this one mixer can cover several bands, the AMMC-6530 can reduce part inventory. The integrated mixer eliminates complex tuning and assembly processes typically required by hybrid (discrete-FET or diode) mixers. For improved reliability and moisture protection, the die is passivated at the active areas. Features • Broad Band Performance 5– 30 GHz • Low Conversion Loss of 8 dB • High Image Rejection of 15 – 20 dB • Good 3rd Order Intercept of +18 dBm • Single -1V, no current Supply Bias Chip Size: 1300 x 1400 µm Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Vg drain IF1 Applications • Microwave Radio Systems • Satellite VSAT, DBS Up/Down Link • LMDS & Pt-Pt mmW Long Haul • Broadband Wireless Access (including 802.16 and 802.20 WiMax) • WLL and MMDS loops • Commercial grade military IF2 gate Vg Absolute Maximum Ratings[1] Symbol Parameters/Conditions Units Min. Max. Vg Gate Supply Voltage V 0 -3 Pin CW Input Power dBm 25 Tch Operating Channel Temperature °C +150 Tstg Storage Case Temperature °C -65 +150 Tmax Max. Assembly Temp (60 sec max) °C +300 Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 0) Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control. AMMC-6530 DC Specifications/Physical Properties[1] Symbol Parameters and Test Conditions Ig Gate Supply Current (under any RF power drive and temperature) Vg Gate Supply Operating Voltage Note: 1. Ambient operational temperature TA=25°C unless otherwise noted. Units mA V Typ. 0 -1V AMMC-6530 Typical Performance [2, 3] (TA= 25°C, Vg= -1V, IF frequency = 1 GHz, Zo=50 Ω) Symbol Parameters and Test Conditions Units Gate Pumped Drain Pumped FRF RF Frequency Range FLO LO Frequency Range FIF IF Frequency Range GHz 5 – 30 GHz 5 – 30 GHz DC – 5 5 – 30 5 – 30 DC – 5 Down Conversion Up Conversion Down Conversion PLO LO Port Pumping Power CG RF to IF Conversion Gain dBm >10 dB -10 RL_RF RF Port Return Loss dB 5 RL_LO LO Port Return Loss dB 10 RL_IF IF Port Return Loss dB 10 IR Image Rejection Ratio dB 15 LO-RF Iso. LO to RF Port Isolation dB 22 LO-IF Iso. LO to IF Port Isolation dB 25 RF-IF Iso. RF to IF Port Isolation dB 15 IIP3 Input IP3, Fdelta=100 MHz, Prf = -10 dBm, Plo = 15 dBm dBm 18 P-1 Input Port Power at 1dB gain compression point, Plo=+10 dBm dBm 8 NF Noise Figure dB 10 Notes: 2. Small/Large signal data measured in a fully de-embedded test fixture form TA = 25°C. 3. Specifications are derived from measurements in a 50Ω test environment. >0 >10 -15 -8 5 10 10 5 10 10 15 15 25 22 25 25 15 15 — 10 —0 — 12 AMMC-6530 RF Specifications in Drain Pumped Test Configuration[4, 5, 6] (TA= 25°C, Vg= -1.0V, PLO= +10 dBm, Zo = 50 Ω) Symbol Parameters and Test Conditions Units Min Typ. Max CG Conversion Gain f = 7 GHz dB -12.0 -10.5 f = 18 GHz dB -10.0 -8.0 f = 28 GHz dB -12.5 -10.0 IR Image Rejection Ratio dB -23.5 -18 Notes: 4. Performance verified 100% on-wafer. 5. 100% on-wafer RF testing is done at RF frequency = 7, 18, and 28 GHz; IF frequency = 2 GHz. 6. The external 90 degree hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency 1.0 – 2.0 GHz. 2 AMMC-6530 Typical Performance under Gate Pumped Down Conversion Operation (TA = 25°C, Vg = -1V, Zo = 50Ω) RF Vg drain LSB IF1 gate Vg IF2 USB -1V LO Note: The external 90° hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency is 1.0 – 2.0 GHz. Highly linear down conversion or up conversion mixer application (Gate pumped mixer operation) CONVERSION GAIN (dB) 0 -5 -10 -15 -20 -25 -30 -35 -40 USB(dB) -45 LSB(dB) -50 5 10 15 20 25 30 FREQUENCY (GHz) Figure 1. Conversion Gain with IF terminated for Low Side Conversion LO=+10 dBm, IF=1 GHz. 20 15 10 5 0 5 10 15 20 FREQUENCY (GHz) Figure 4. Noise Figure. LO=+7 dBm, IF=1 GHz. 25 30 IIP3 (dBm) CONVERSION GAIN (dB) 0 -5 -10 -15 -20 -25 -30 -35 -40 USB(dB) -45 LSB(dB) -50 5 10 15 20 25 30 FREQUENCY (GHz) Figure 2. Conversion Gain with IF terminated for High Side Conversion LO=+10 dBm, IF=1 GHz. 25 20 15 10 Plo=15(dBm) Plo=10(dBm) 5 5 10 15 20 25 30 FREQUENCY (GHz) Figure 5. Input 3rd Order Intercept Point. IF=1 GHz. CONVERSION GAIN (dB) INPUT .


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