Document
HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz)
Data Sheet
Description
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.
The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.
Applications
The beam lead diode is ideally suited for use in stripline or microstrip circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through K-band.
Features
• Platinum tri-metal system High temperature stability
• Silicon nitride passivation Stable, reliable performance
• Low noise figure Guaranteed 7.5 dB at 26 GHz
• High uniformity Tightly controlled process insures uniform RF characteristics
• Rugged construction 4 grams minimum lead pull
• Low capacitance 0.10 pF max. at 0 V
• Polyimide scratch protection
The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Equivalent low barrier devices are HSCH-5330 and -5332. Batch matched versions are available as HSCH-5331.
The HSCH-5340 is selected for applications requiring guaranteed RF-tested performance up to 26 GHz. The HSCH-5314 is rated at 7.2 dB maximum noise figure at 16 GHz.
Assembly Techniques Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information, see Application Note 979, The Handling and Bonding of Beam Lead Devices Made Easy, or Application Note 993, Beam Lead Device Bonding to Soft Substances.
Outline 07
130 (5) 100 (4)
CATHODE GOLD LEADS
225 (9) 200 (8)
310 (12) 250 (10)
225 (9) 170 (7)
135 (5) 90 (3)
135 (5) 90 (3)
30 MIN (1)
8 Min. (.3)
SILICON
710 (28) 670 (26)
GLASS
60 (2) 40 (1)
DIMENSIONS IN µm (1/1000 inch)
Maximum Ratings
Pulse Power Incident at TA = 25°C ........................................................ 1 W Pulse Width = 1 ms, Du = 0.001
CW Power Dissipation at TA = 25°C ............................................... 150 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature
TOPR – Operating Temperature Range ............................. -65°C to +175 °C TSTG – Storage Temperature Range ................................... -65°C to +200°C Minimum Lead Strength ...................................... 4 grams pull on any lead Diode Mounting Temperature .............................. +350°C for 10 sec. max.
These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode.
Table IA. Electrical Specifications for RF Tested Diodes at TA = 25°C
Part Number HSCH-
5314
Barrier Medium
Max. Noise Figure NF (dB)
7.2 at 16 GHz
IF Impedance
ZIF (Ω)
Min. Max.
200 400
Max. SWR
1.5:1
Min. Breakdown Voltage VBR (V)
4
5340 Low 7.5 at 150 26 GHz
350
Test Conditions
DC Load Resistance - 0 Ω LO Power = 1 mW
IF = 30 MHz, 1.5 dB NF
IR ≤ 10 µA
*Minimum batch size 20 units.
Note: 1. CT = CJ + 0.02 pF (fringing cap).
Max. Dynamic Resis-
tance RD (Ω)
16
20
IF = 5 mA
Max. Total Capacitance CT (pF)
0.15
Max. Forward Voltage VF (mV)
500
0.10 375
VR = 0 V IF = 1 mA f = 1 MHz
Max. Leakage Current IR (nA)
100
400
VR = 1 V
2
Table IB. Electrical Specifications for DC Tested Diodes at TA = 25°C
Part Number HSCH-
Batch* Matched HSCH-
Barrier
Minimum Breakdown
Voltage VBR (V)
Maximum Dynamic Resistance RD (Ω)
5312
Medium
4
16
5310 20
5332 Low 5330 5331
4
16 20
Test Conditions
∆VF ≤ 15 mV @ 5 mA
IR ≤ 10 µA
IF = 5 mA
*Minimum batch size 20 units.
Maximum Total
Capacitance CT (pF)
0.15 0.10
0.15 0.10
VR = 0 V f = 1 MHz
Maximum Forward Voltage VF (mV)
500
375
IF = 1 mA
Maximum Leakage Current IR (nA)
100
400
VR = 1 V
Typical Detector Characteristics at TA = 25°C Medium Barrier and Low Barrier (DC Bias)
Parameter
Symbol
Tangential Sensitivity
TSS
Voltage Sensitivity
γ
Video Resistance
RV
Typical Value –54 6.6 1400
Low Barrier (Zero Bias) Parameter Tangential Sensitivity
Voltage Sensitivity
Video Resistance
Symbol TSS γ RV
Typical Value –44 10 1.8
Units dBm
mV/µW Ω
Test Conditions
20 µA Bias, RL = 100 kΩ Video Bandwidth = 2 MHz f = 10 GHz
Units dBm
mV/µW MΩ
Test Conditions
Zero Bias, RL = 10 MΩ Video Bandwidth = 2 MHz f = 10 GHz
SPICE Parameters
Parameter
BV CJO EG IBV IS N
RS PB PT M
Units V pF eV A A
Ω V
3
HSCH-5312 HSCH-5314
5 0.13 0.69 10E-5 3 x 10E-10 1.08
9 0.65
2 0.5
HSCH-5310 5
0.09 0.69 10E-5 3 x 10E-10 1.08 13 0.65
2 0.5
HSCH-5330 HSCH-5340
5 0.09 0.69 10E-5 4 x 10E-8 1.08 13 0.5
2 0.5
HSCH-5332 5
0.13 0.69 10E-5 4 x 10E-8 1.08
9 0.5 2 0.5
Typical Parameters
FORWARD CURRENT (mA) FORWARD CURRENT (mA)
NOISE FIGURE (dB)
100
+125°C +25°C –55°C 10
1
0.1
0.01 0
0.2 0.4 0.6 0.8 FORWAR.