DatasheetsPDF.com

HSCH-5340 Dataheets PDF



Part Number HSCH-5340
Manufacturers AVAGO
Logo AVAGO
Description Beam Lead Schottky Diodes
Datasheet HSCH-5340 DatasheetHSCH-5340 Datasheet (PDF)

HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data Sheet Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Avago beam lead process allows for large beam ancho.

  HSCH-5340   HSCH-5340


Document
HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data Sheet Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance. Applications The beam lead diode is ideally suited for use in stripline or microstrip circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through K-band. Features • Platinum tri-metal system High temperature stability • Silicon nitride passivation Stable, reliable performance • Low noise figure Guaranteed 7.5 dB at 26 GHz • High uniformity Tightly controlled process insures uniform RF characteristics • Rugged construction 4 grams minimum lead pull • Low capacitance 0.10 pF max. at 0 V • Polyimide scratch protection The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Equivalent low barrier devices are HSCH-5330 and -5332. Batch matched versions are available as HSCH-5331. The HSCH-5340 is selected for applications requiring guaranteed RF-tested performance up to 26 GHz. The HSCH-5314 is rated at 7.2 dB maximum noise figure at 16 GHz. Assembly Techniques Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information, see Application Note 979, The Handling and Bonding of Beam Lead Devices Made Easy, or Application Note 993, Beam Lead Device Bonding to Soft Substances. Outline 07 130 (5) 100 (4) CATHODE GOLD LEADS 225 (9) 200 (8) 310 (12) 250 (10) 225 (9) 170 (7) 135 (5) 90 (3) 135 (5) 90 (3) 30 MIN (1) 8 Min. (.3) SILICON 710 (28) 670 (26) GLASS 60 (2) 40 (1) DIMENSIONS IN µm (1/1000 inch) Maximum Ratings Pulse Power Incident at TA = 25°C ........................................................ 1 W Pulse Width = 1 ms, Du = 0.001 CW Power Dissipation at TA = 25°C ............................................... 150 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature TOPR – Operating Temperature Range ............................. -65°C to +175 °C TSTG – Storage Temperature Range ................................... -65°C to +200°C Minimum Lead Strength ...................................... 4 grams pull on any lead Diode Mounting Temperature .............................. +350°C for 10 sec. max. These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. Table IA. Electrical Specifications for RF Tested Diodes at TA = 25°C Part Number HSCH- 5314 Barrier Medium Max. Noise Figure NF (dB) 7.2 at 16 GHz IF Impedance ZIF (Ω) Min. Max. 200 400 Max. SWR 1.5:1 Min. Breakdown Voltage VBR (V) 4 5340 Low 7.5 at 150 26 GHz 350 Test Conditions DC Load Resistance - 0 Ω LO Power = 1 mW IF = 30 MHz, 1.5 dB NF IR ≤ 10 µA *Minimum batch size 20 units. Note: 1. CT = CJ + 0.02 pF (fringing cap). Max. Dynamic Resis- tance RD (Ω) 16 20 IF = 5 mA Max. Total Capacitance CT (pF) 0.15 Max. Forward Voltage VF (mV) 500 0.10 375 VR = 0 V IF = 1 mA f = 1 MHz Max. Leakage Current IR (nA) 100 400 VR = 1 V 2 Table IB. Electrical Specifications for DC Tested Diodes at TA = 25°C Part Number HSCH- Batch* Matched HSCH- Barrier Minimum Breakdown Voltage VBR (V) Maximum Dynamic Resistance RD (Ω) 5312 Medium 4 16 5310 20 5332 Low 5330 5331 4 16 20 Test Conditions ∆VF ≤ 15 mV @ 5 mA IR ≤ 10 µA IF = 5 mA *Minimum batch size 20 units. Maximum Total Capacitance CT (pF) 0.15 0.10 0.15 0.10 VR = 0 V f = 1 MHz Maximum Forward Voltage VF (mV) 500 375 IF = 1 mA Maximum Leakage Current IR (nA) 100 400 VR = 1 V Typical Detector Characteristics at TA = 25°C Medium Barrier and Low Barrier (DC Bias) Parameter Symbol Tangential Sensitivity TSS Voltage Sensitivity γ Video Resistance RV Typical Value –54 6.6 1400 Low Barrier (Zero Bias) Parameter Tangential Sensitivity Voltage Sensitivity Video Resistance Symbol TSS γ RV Typical Value –44 10 1.8 Units dBm mV/µW Ω Test Conditions 20 µA Bias, RL = 100 kΩ Video Bandwidth = 2 MHz f = 10 GHz Units dBm mV/µW MΩ Test Conditions Zero Bias, RL = 10 MΩ Video Bandwidth = 2 MHz f = 10 GHz SPICE Parameters Parameter BV CJO EG IBV IS N RS PB PT M Units V pF eV A A Ω V 3 HSCH-5312 HSCH-5314 5 0.13 0.69 10E-5 3 x 10E-10 1.08 9 0.65 2 0.5 HSCH-5310 5 0.09 0.69 10E-5 3 x 10E-10 1.08 13 0.65 2 0.5 HSCH-5330 HSCH-5340 5 0.09 0.69 10E-5 4 x 10E-8 1.08 13 0.5 2 0.5 HSCH-5332 5 0.13 0.69 10E-5 4 x 10E-8 1.08 9 0.5 2 0.5 Typical Parameters FORWARD CURRENT (mA) FORWARD CURRENT (mA) NOISE FIGURE (dB) 100 +125°C +25°C –55°C 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 FORWAR.


HSCH-5314 HSCH-5340 HSCH-5312


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)