ATF-551M4
Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
Data Sheet
Description
Avago ...
ATF-551M4
Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
Data Sheet
Description
Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E‑pHEMT GaAs FET housed in a thin miniature leadless package. The combination of small device size, super low noise (under 1 dB Fmin from 2 to 6 GHz), high linearity and low power makes the ATF-551M4 ideal for LNA or hybrid module designs in wireless receiver in the 450 MHz to 10 GHz frequency band. Applications include Cellular/PCS/ WCDMA handsets and data modem cards, fixed wireless infrastructure in the 2.4, 3.5 GHz and UNII frequency bands, as well as 2.4 GHz 802.11b, 5 GHz 802.11a and HIPERLAN/2 Wireless LAN PC-cards.
Note: 1. Avago’s enhancement mode E-pHEMT devices are the first com-
mercially available single-supply GaAs
transistors that do not need a negative gate bias voltage for operation. They can help simplify the design and reduce the cost of receivers and transmitters in many applications in the 450 MHz to 10 GHz frequency range.
MiniPak 1.4 mm x 1.2 mm Package
Vx
Pin Connections and Package Marking
Features
Very low noise figure and high linearity Single Supply Enhancement Mode Technology[1]
optimized for 3V operation Excellent uniformity in product specifications 400 micron gate width Thin miniature package 1.4 mm x 1.2 mm x 0.7 mm Tape-and-reel packaging option available
Specifications
2 GHz; 2.7V, 10 mA (typ.) 24.1 dBm output 3rd order...