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GT10J303 Dataheets PDF



Part Number GT10J303
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel IGBT
Datasheet GT10J303 DatasheetGT10J303 Datasheet (PDF)

www.DataSheet.co.kr GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS z Third-generation IGBT z Enhancement mode type z High speed z Low saturation voltage : tf = 0.30μs (Max.) (IC = 10A) : VCE (sat) = 2.7V (Max.) (IC = 10A) Unit: mm z FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate-Emitter Voltage Collector Current Emitte.

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www.DataSheet.co.kr GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS z Third-generation IGBT z Enhancement mode type z High speed z Low saturation voltage : tf = 0.30μs (Max.) (IC = 10A) : VCE (sat) = 2.7V (Max.) (IC = 10A) Unit: mm z FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate-Emitter Voltage Collector Current Emitter−Collector Forward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 600 ±20 10 20 10 20 30 150 −55~150 UNIT V V A A A A W °C °C JEDEC JEITA TOSHIBA Weight: ⎯ ⎯ 2-10R1C g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). EQUIVALENT CIRCUIT MARKING 10J303 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-10-31 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GT10J303 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Collector Cut−Off Current Gate-Emitter Cut−Off Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Switching Time Turn−On Time Fall Time Turn−Off Time Peak Forward Voltage Reverse Recovery Time Thermal Resistance (IGBT) Thermal Resistance (Diode) SYMBOL IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Rth (j-c) TEST CONDITION VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 IC = 1mA, VCE = 5V IC = 10A, VGE = 15V VCE = 20V, VGE = 0, f = 1MHz Inductive Load VCC = 300V, IC = 10A VGG = ±15V, RG = 100Ω (Note 1) IF = 10A, VGE = 0 IF = 10A, di / dt = −100A / μs ― ― MIN ― ― 5.0 ― ― ― ― ― ― ― ― ― ― TYP. ― ― ― 2.1 720 0.12 0.40 0.15 0.50 ― ― ― ― MAX ±500 1.0 8.0 2.7 ― ― ― 0.30 ― 2.0 200 4.17 4.9 V ns °C / W °C / W μs UNIT nA mA V V pF Note 1: Switching time measurement circuit and input / output waveforms Switching loss measurement waveforms 2 2006-10-31 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GT10J303 3 2006-10-31 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GT10J303 4 2006-10-31 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GT10J303 5 2006-10-31 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GT10J303 6 2006-10-31 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GT10J303 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited u.


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